NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complements: BCX51, BCX52 and BCX53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio and video amplifiers.

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51...BCX53 (PNP)

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: PCM=0.5W (Tamb=25°C) • Collector Current: ICM=1.0A • Collector-Base Voltage: V(BR)CBO=100V • Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL • Epoxy meets U

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: PCM=0.5W (Tamb=25°C) • Collector Current: ICM=1.0A • Collector-Base Voltage: V(BR)CBO=100V • Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL • Epoxy meets U

NPN Plastic-Encapsulate Transistor

FEATURES • High current • Low voltage • Medium power general purposes • Driver stages of audio amplifiers.

80 V, 1 A NPN medium power transistors

丝印代码：BK；NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51…BCX53(PNP)

NPN Medium Power Transistors

Features ● High current (max. 1 A). ● Low voltage (max. 80 V).

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 51 … BCX 53 (PNP)

丝印代码：BK；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ® PNP Complements to BCX51,BCX52,BCX53 ® Low Voltage ® High Current APPLICATIONS ® Driver Stages of Audio Amplifiers

丝印代码：BK；80 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BK；80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability 3. Applications • Li

丝印代码：BK；Plastic-Encapsulate Transistors

FEATURES PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current APPLICATIONS Driver Stages of Audio Amplifiers

Plastic-Encapsulate Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

丝印代码：BK；NPN TRANSISTOR

VOLTAGE 45~80.0 Volts CURRENT 1.0 Ampers FEATURES ● High current (max. 1 A). ● Low voltage (max. 80 V).

NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

80 V, 1 A NPN medium power transistor

NPN medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: BCX53. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified;

丝印代码：BK；NPN Plastic-Encapsulate Transistors

文件：1.88778 Mbytes Page：5 Pages

丝印代码：BK；NPN medium power transistor

文件：591.06 Kbytes Page：2 Pages

NPN Plastic-Encapsulate Transistors

文件：260.63 Kbytes Page：2 Pages

For AF driver and output stages

文件：526.17 Kbytes Page：8 Pages

SURFACE MOUNT NPN SILICON TRANSISTOR

文件：290 Kbytes Page：2 Pages

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

丝印代码：BK；80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according t

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.0 Amp • Available in 7 inch/1000 unit Tape

80 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

丝印代码：A5；80 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

80 V, 1 A NPN power bipolar transistors

NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.\nTable 1. Product overview Type number\n Package\n NPN complement\n Nexperia\n JEITA\n JEDEC\n BCX56T\n SOT89\n SC-62\n TO-243\n BCX53T\n BCX56-10T\n BCX53-10 • High collector current capability IC and ICM\n• High power dissipation capability\n• AEC-Q101 qualified;

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon Epitaxial Transistor

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat)

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Switching.