NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complements: BCX51, BCX52 and BCX53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio and video amplifiers.

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51...BCX53 (PNP)

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: PCM=0.5W (Tamb=25°C) • Collector Current: ICM=1.0A • Collector-Base Voltage: V(BR)CBO=100V • Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL • Epoxy meets U

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: PCM=0.5W (Tamb=25°C) • Collector Current: ICM=1.0A • Collector-Base Voltage: V(BR)CBO=100V • Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL • Epoxy meets U

NPN Silicon AF Transistor

Features: • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types:BCX51/BCX52/BCX53

NPN Plastic-Encapsulate Transistor

FEATURES • High current • Low voltage • Medium power general purposes • Driver stages of audio amplifiers.

80 V, 1 A NPN medium power transistors

丝印代码：BL；NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX51…BCX53(PNP)

NPN Medium Power Transistors

Features ● High current (max. 1 A). ● Low voltage (max. 80 V).

丝印代码：BL；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES ® PNP Complements to BCX51,BCX52,BCX53 ® Low Voltage ® High Current APPLICATIONS ® Driver Stages of Audio Amplifiers

丝印代码：BL；80 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 51 … BCX 53 (PNP)

丝印代码：BL；80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability 3. Applications • Li

丝印代码：BL；Plastic-Encapsulate Transistors

FEATURES PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current APPLICATIONS Driver Stages of Audio Amplifiers

Plastic-Encapsulate Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

丝印代码：BL；NPN TRANSISTOR

VOLTAGE 45~80.0 Volts CURRENT 1.0 Ampers FEATURES ● High current (max. 1 A). ● Low voltage (max. 80 V).

NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

NPN Switching Transistor

Features ® For AF driver and output stages ® High collector current ® Low collector-emitter saturation voltage ® Complementary types: TPBCX51/TPBCX52/TPBCX53.

80 V, 1 A NPN medium power transistor

NPN medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. PNP complement: BCX53. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified;

丝印代码：BL；NPN Plastic-Encapsulate Transistors

文件：1.88778 Mbytes Page：5 Pages

NPN Plastic-Encapsulate Transistors

文件：260.63 Kbytes Page：2 Pages

For AF driver and output stages

文件：526.17 Kbytes Page：8 Pages

SURFACE MOUNT NPN SILICON TRANSISTOR

文件：290 Kbytes Page：2 Pages

80 V, 1 A NPN medium power transistors

NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP comple

丝印代码：811D；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP comple

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

80 V, 1 A NPN medium power transistors

NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package • High collector current capability IC and ICM\n• Three current gain selections\n• High power dissipation capability\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

丝印代码：BL；80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according t

80 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

丝印代码：A6；80 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Features • Ic = 1A Continuous Collector Current • Low Saturation Voltage VCE(sat)

NPN Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Power Dissipation: PCM=0.5W (Tamb=25°C) • Collector Current: ICM=1.0A • Collector-Base Voltage: V(BR)CBO=100V • Marking : BCX56=BH, BCX56-10=BK, BCX56-16=BL • Epoxy meets U

封装/外壳：TO-243AA 包装：散装 描述：TRANS NPN 80V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Medium Power Bipolar Transistors

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat)

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Switching.