丝印代码：BCP56-16；NPN Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

丝印代码：BCP56-16；NPN Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

丝印代码：BCP56/16；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability

丝印代码：BCP56/16；80 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

Low power NPN Transistor

SMALL SIGNAL NPN TRANSISTORS ■ SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS ■ SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE PNP COMPLEMENTARY TYPES ARE BCP52-16 AND BCP53-16 RESPECTIVELY APPLICATIONS ■ MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS ■

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 BCP53 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat)

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Switching.

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 BCP53 (PNP)

80 V, 1 A NPN medium power transistors

丝印代码：BCP56；NPN Medium Power Transistor

■ Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary to BCP51,BCP52,BCP53

低功耗NPN晶体管

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum r • Silicon epitaxial planar NPN medium voltage transistor \n• Available in tape & reel packing \n• SOT-223 plastic package for surface mounting circuits \n• The PNP complementary type is BCP53-16 \n• In compliance with the 2002/93/EC European Directive;

80 V, 1 A NPN medium power transistor

NPN medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BCP53. • High current\n• Three current gain selections\n• High power dissipation capability\n• AEC-Q101 qualified;

1.0 A, 80 V NPN Bipolar Junction Transistor

This 1.0 A, 80 V NPN Bipolar Junction Transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.PNP Complement:BCP53Different hFE windows available:BCP56: 40 - 250BCP56-10: 63 - 160BCP56- • Collector current, IC =of 1.0 Amp\n• High current capable\n• The SOT-223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die\n• S Prefix for Automotive and Other Applications Requiring UniqueSite an;

NPN Silicon AF Transistors

文件：530.52 Kbytes Page：7 Pages

NPN Plastic-Encapsulate Transistors

文件：480.43 Kbytes Page：5 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP comple

丝印代码：8110DW；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP comple

For AF driver and output stages

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 BCP53 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

80 V, 1 A PNP medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

丝印代码：P5616H；80 V, 1 A NPN medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

丝印代码：BCP56/16；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

丝印代码：P5616T；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability

80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

NPN Silicon Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features • Pb−Free Package is Available • High Current: 1.0 Amp • The SOT-223 package c

NPN Silicon Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features • Pb−Free Package is Available • High Current: 1.0 Amp • The SOT-223 package c

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

NPN Silicon Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features • Pb−Free Package is Available • High Current: 1.0 Amp • The SOT-223 package c

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

丝印代码：P5616T；80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon Medium Power Transistor

文件：326.88 Kbytes Page：2 Pages

丝印代码：P5616H；80 V, 1 A NPN medium power transistors

文件：1.25985 Mbytes Page：16 Pages

丝印代码：P5616T；80 V, 1 A NPN medium power transistors

文件：275.24 Kbytes Page：14 Pages

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 51 … BCX 53 (PNP)

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT89 plastic package. PNP complements: BCX51, BCX52 and BCX53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio and video amplifiers.