PNP Plastic Encapsulate Transistor

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PNP Silicon AF Transistors

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 54 … BCX 56 (NPN)

丝印代码：AL；PNP-General use transistor

丝印代码：AL；80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

PNP Medium power transistors

FEATURES ● For AF driver and output stages. ● High collector current. ● Low collector-emitter saturation voltage. ● Complementary types: BCX54/BCX55/BCX56. APPLICATIONS ● Medium power general purposes. ● Driver stages of audio amplifiers.

Plastic-Encapsulate Transistors

FEATURES • IC = -1A Continuous Collector Current • Low Saturation Voltage VCE(sat)

PNP Switching Transistor

Features ® For AF driver and output stages. ® High collector current. ® Low collector-emitter saturation voltage. ® Complementary types: TPBCX54/TPBCX55/TPBCX56.

丝印代码：AL；SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS COMPLEMENTARY TYPE – BCX51 – BCX54 BCX52 – BCX55 BCX53 – BCX56

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BCX54, BCX55 and BCX56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Medium power general purposes • Driver stages of audio amplifiers.

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54...BCX56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

PNP Medium Power Transistor

Features: • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54/BCX55/BCX56 Applications: • Medium power general purposes • Driver stages of audio amplifiers

PNP Plastic-Encapsulate Transistor

PNP Plastic-Encapsulate Transistor P/b Lead(Pb)-Free

80 V, 1 A PNP medium power transistors

80 V, 1 A PNP medium power transistors

PNP Medium Power Transistors

Features ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current

丝印代码：AL；Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current APPLICATIONS ● Medium Power General Purposes ● Driver Stages of Audio Amplifiers

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS COMPLEMENTARY TYPE – BCX51 – BCX54 BCX52 – BCX55 BCX53 – BCX56

PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN com

丝印代码：911D；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.4V(max)@Ic/Ib= -500mA / -50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN com

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54...BCX56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

General Purpose Transistor

General Purpose Transistor Features - Transistor PNP. - Low voltage. - High current.

丝印代码：AL；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrica

丝印代码：A3；80 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

80 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

PNP Silicon AF Transistors

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SURFACE MOUNT PNP SILICON TRANSISTOR

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PNP Plastic-Encapsulate Transistors

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丝印代码：AL；TRANSISTOR (PNP)

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丝印代码：AL；TRANSISTOR (PNP)

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For AF driver and output stages

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80 V, 1 A PNP medium power transistors

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 80V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 80V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

低电压双极晶体管

General Purpose Transistor

Medium Power Bipolar Transistors

PNP Silicon Epitaxial Transistors

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General purpose Dual digital transistor

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General purpose (dual digital transistor)

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