丝印代码：AE；SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS COMPLEMENTARY TYPE – BCX51 – BCX54 BCX52 – BCX55 BCX53 – BCX56

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54...BCX56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BCX54, BCX55 and BCX56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Medium power general purposes • Driver stages of audio amplifiers.

SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOW

PNP Plastic-Encapsulate Transistors

Features ● Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ● Power Dissipation: PCM=0.5W (Tamb=25°C) ● Collector Current: ICM=-1.0A ● Collector-Base Voltage: V(BR)CBO=-60V ● Marking Code: BCX52=AE, BCX52-10=AG, BCX52-16=AM ● Epoxy meets UL 94 V-

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Features • BVCEO > -45V, -60V & -80V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Low Saturation Voltage VCE(SAT)

PNP Medium Power Transistor

Features: • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54/BCX55/BCX56 Applications: • Medium power general purposes • Driver stages of audio amplifiers

60 V, 1 A PNP medium power transistors

PNP Medium power transistors

FEATURES ● For AF driver and output stages. ● High collector current. ● Low collector-emitter saturation voltage. ● Complementary types: BCX54/BCX55/BCX56. APPLICATIONS ● Medium power general purposes. ● Driver stages of audio amplifiers.

PNP M edium P ow er Transistors

Features High current (max. 1 A). Low voltage (max. 80 V).

TRANSISTOR (PNP)

FEATURES ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current APPLICATIONS ● Medium Power General Purposes ● Driver Stages of Audio Amplifiers

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current APPLICATIONS ● Medium Power General Purposes ● Driver Stages of Audio Amplifiers

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current APPLICATIONS ● Medium Power General Purposes ● Driver Stages of Audio Amplifiers

PNP Medium Power Transistors

Features ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current

丝印代码：AE；Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current APPLICATIONS ● Medium Power General Purposes ● Driver Stages of Audio Amplifiers

Plastic-Encapsulate Transistors

Features Power dissipation PCM: 0.5 W (Tamb=25°C) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55°C to +150°C

PNP Silcon Planar Medium Power Transistors In SOT89

PNP Silicon AF Transistors

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 54 … BCX 56 (NPN)

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

丝印代码：AE；60 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

60 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

Plastic-Encapsulate Transistors

FEATURES • IC = -1A Continuous Collector Current • Low Saturation Voltage VCE(sat)

TRANSISTOR (PNP)

FEATURES ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current APPLICATIONS ● Driver Stages of Audio Amplifiers

60 V, 1 A PNP medium power transistor

PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BCX55. • High current\n• Three current gain selections\n• High power dissipation capability\n• Exposed heatsink for excellent thermal and electrical conductivity\n• AEC-Q101 qualified;

晶体管

PNP, 60V, 1A, SOT89

PNP Silicon AF Transistors

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PNP Transistors

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PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.

60 V, 1 A PNP medium power transistors

PNP Plastic-Encapsulate Transistors

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丝印代码：AE；TRANSISTOR (PNP)

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丝印代码：AE；TRANSISTOR (PNP)

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SURFACE MOUNT PNP SILICON TRANSISTOR

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SURFACE MOUNT PNP SILICON TRANSISTOR

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For AF driver and output stages

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PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BCX54, BCX55 and BCX56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Medium power general purposes • Driver stages of audio amplifiers.

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54...BCX56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

丝印代码：AG；SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS COMPLEMENTARY TYPE – BCX51 – BCX54 BCX52 – BCX55 BCX53 – BCX56

PNP Plastic-Encapsulate Transistors

Features ● Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ● Power Dissipation: PCM=0.5W (Tamb=25°C) ● Collector Current: ICM=-1.0A ● Collector-Base Voltage: V(BR)CBO=-60V ● Marking Code: BCX52=AE, BCX52-10=AG, BCX52-16=AM ● Epoxy meets UL 94 V-

PNP Medium Power Transistors

Features ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current

PNP Medium power transistors

FEATURES ● For AF driver and output stages. ● High collector current. ● Low collector-emitter saturation voltage. ● Complementary types: BCX54/BCX55/BCX56. APPLICATIONS ● Medium power general purposes. ● Driver stages of audio amplifiers.

丝印代码：AG；Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current APPLICATIONS ● Medium Power General Purposes ● Driver Stages of Audio Amplifiers

PNP Silicon AF Transistors

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 54 … BCX 56 (NPN)

丝印代码：AG；60 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

Plastic-Encapsulate Transistors

FEATURES • IC = -1A Continuous Collector Current • Low Saturation Voltage VCE(sat)

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS COMPLEMENTARY TYPE – BCX51 – BCX54 BCX52 – BCX55 BCX53 – BCX56

丝印代码：AG；60 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrica

丝印代码：C3；60 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

60 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Features • BVCEO > -45V, -60V & -80V • IC = -1A Continuous Collector Current • ICM = -2A Peak Pulse Current • Low Saturation Voltage VCE(SAT)

PNP Plastic-Encapsulate Transistors

Features ● Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ● Power Dissipation: PCM=0.5W (Tamb=25°C) ● Collector Current: ICM=-1.0A ● Collector-Base Voltage: V(BR)CBO=-60V ● Marking Code: BCX52=AE, BCX52-10=AG, BCX52-16=AM ● Epoxy meets UL 94 V-

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54...BCX56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BCX54, BCX55 and BCX56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Medium power general purposes • Driver stages of audio amplifiers.

丝印代码：AM；60 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

PNP Silicon AF Transistors

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 54 … BCX 56 (NPN)

丝印代码：AM；Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current APPLICATIONS ● Medium Power General Purposes ● Driver Stages of Audio Amplifiers

PNP Medium power transistors

FEATURES ● For AF driver and output stages. ● High collector current. ● Low collector-emitter saturation voltage. ● Complementary types: BCX54/BCX55/BCX56. APPLICATIONS ● Medium power general purposes. ● Driver stages of audio amplifiers.

PNP Medium Power Transistors

Features ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current

PNP Medium Power Transistor

Features: • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54/BCX55/BCX56 Applications: • Medium power general purposes • Driver stages of audio amplifiers