60 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

PNP Silicon AF Transistors

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCX 54 … BCX 56 (NPN)

PNP Medium Power Transistors

Features ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current

PNP Plastic-Encapsulate Transistors

Features ● Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ● Power Dissipation: PCM=0.5W (Tamb=25°C) ● Collector Current: ICM=-1.0A ● Collector-Base Voltage: V(BR)CBO=-60V ● Marking Code: BCX52=AE, BCX52-10=AG, BCX52-16=AM ● Epoxy meets UL 94 V-

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BCX54, BCX55 and BCX56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Medium power general purposes • Driver stages of audio amplifiers.

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54...BCX56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

PNP Medium power transistors

FEATURES ● For AF driver and output stages. ● High collector current. ● Low collector-emitter saturation voltage. ● Complementary types: BCX54/BCX55/BCX56. APPLICATIONS ● Medium power general purposes. ● Driver stages of audio amplifiers.

Plastic-Encapsulate Transistors

FEATURES • IC = -1A Continuous Collector Current • Low Saturation Voltage VCE(sat)

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● NPN Complements to BCX54,BCX55,BCX56 ● Low Voltage ● High Current APPLICATIONS ● Medium Power General Purposes ● Driver Stages of Audio Amplifiers

PNP Silicon AF Transistors

文件：587.55 Kbytes Page：6 Pages

TRANSISTOR (PNP)

文件：265.5 Kbytes Page：6 Pages

60 V, 1 A PNP medium power transistors

PNP Plastic-Encapsulate Transistors

文件：349.37 Kbytes Page：3 Pages

For AF driver and output stages

文件：526.55 Kbytes Page：8 Pages

SURFACE MOUNT PNP SILICON TRANSISTOR

文件：290.14 Kbytes Page：2 Pages

TRANSISTOR (PNP)

文件：335.96 Kbytes Page：6 Pages

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS COMPLEMENTARY TYPE – BCX51 – BCX54 BCX52 – BCX55 BCX53 – BCX56

PNP Silicon AF Transistors

PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCX54...BCX56 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

General Purpose Transistor

General Purpose Transistor Features - Transistor PNP. - Low voltage. - High current.

60 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrica

60 V, 1 A PNP power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

60 V, 1 A NPN power bipolar transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 1A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

60 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal an

45 V/60 V/80 V, 1 A PNP medium power transistors

General description PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits ■ High collector current capability IC

60 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Reduced Printed-Circuit Board (PCB) area requirements • Exposed heat sink for excellent thermal and electrical conductivity • Two current gain selections • Leadless very small SMD plastic package with medium power capabili

60 V, 1 A PNP medium power transistors