NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt

Plastic-Encapsulate Transistors

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NPN DarlingtonTransistor

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt

NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS

NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS TO-92 Plastic Package *Pulsed Conditions: Pulse Width = 300ms, Duty Cycle

45V PNP MEDIUM POWER TRANSISTOR IN SOT23

Features • BVCEO > -45V • IC = -800mA high Continuous Collector Current • Low Saturation Voltage VCE(sat)

Si-Epitaxial Planar Darlington-Transistors

• Power dissipation 625 mW • Plastic case TO-92(10D3) • Weight approx. 0.18 g • Plastic material has UL classification 94V-0 • Standard packaging taped in ammo pack

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt

NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS

NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS TO-92 Plastic Package *Pulsed Conditions: Pulse Width = 300ms, Duty Cycle

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp * Ptot=1 Watt

NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS

NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS TO-92 Plastic Package *Pulsed Conditions: Pulse Width = 300ms, Duty Cycle

NPN SILICON PLANAR MEDIUM

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Through-Hole Transistor-Small Signal (<=1A) NPN Darlington

NPN, 60V, 0.8A, E-Line

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 60V 0.8A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：E-Line-3 包装：卷带（TR） 描述：TRANS NPN DARL 60V 0.8A E-LINE 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

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