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BCV61晶体管资料
BCV61别名：BCV61三极管、BCV61晶体管、BCV61晶体三极管
BCV61生产厂家：
BCV61制作材料：Si-NPN
BCV61性质：表面帖装型 （SMD）_TEMP_KOMP
BCV61封装形式：贴片封装
BCV61极限工作电压：50V
BCV61最大电流允许值：0.1A
BCV61最大工作频率：300MHZ
BCV61引脚数：4
BCV61最大耗散功率：
BCV61放大倍数：
BCV61图片代号：H-17
BCV61vtest：50
BCV61htest：300000000
- BCV61atest：0.1
BCV61wtest：0
BCV61代换 BCV61用什么型号代替：
BCV61价格
参考价格：￥0.5366
型号：BCV61,215 品牌：NXP 备注：这里有BCV61多少钱，2025年最近7天走势，今日出价，今日竞价，BCV61批发/采购报价，BCV61行情走势销售排行榜，BCV61报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BCV61 | NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) NPN Silicon Double Transistors Preliminary Data ●To be used as a current mirror ●Good thermal coupling andVBEmatching ●High current gain ●Low emitter-saturation voltage | SIEMENS 西门子 |   | |
BCV61 | PNP general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage | KEXIN 科信电子 | | |
BCV61 | NPN general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage | KEXIN 科信电子 | | |
BCV61 | NPN general-purpose double transistors Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
BCV61 | PNP general-purpose double transistors Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
BCV61 | NPN general purpose double transistor DESCRIPTION NPN double transistor in a SOT143B plastic package. PNP complement: BCV62. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pairs. APPLICATIONS • For use in applications where the working point must be independent of temperature • | Philips 飞利浦 | | |
BCV61 | NPN Silicon Double Transistor NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBEmatching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 | Infineon 英飞凌 | | |
BCV61 | NPN Silicon Double Transistor 文件：181.56 Kbytes Page：7 Pages | Infineon 英飞凌 | | |
NPN general purpose double transistor DESCRIPTION NPN double transistor in a SOT143B plastic package. PNP complement: BCV62. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pairs. APPLICATIONS • For use in applications where the working point must be independent of temperature • | Philips 飞利浦 | | ||
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) NPN Silicon Double Transistors Preliminary Data ●To be used as a current mirror ●Good thermal coupling andVBEmatching ●High current gain ●Low emitter-saturation voltage | SIEMENS 西门子 | | ||
NPN Silicon Double Transistor NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBEmatching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 | Infineon 英飞凌 | | ||
NPN general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage | KEXIN 科信电子 | | ||
PNP general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage | KEXIN 科信电子 | | ||
NPN general-purpose double transistors Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
PNP general-purpose double transistors Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
NPN general purpose double transistor DESCRIPTION NPN double transistor in a SOT143B plastic package. PNP complement: BCV62. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pairs. APPLICATIONS • For use in applications where the working point must be independent of temperature • | Philips 飞利浦 | | ||
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) NPN Silicon Double Transistors Preliminary Data ●To be used as a current mirror ●Good thermal coupling andVBEmatching ●High current gain ●Low emitter-saturation voltage | SIEMENS 西门子 | | ||
NPN Silicon Double Transistor NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBEmatching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 | Infineon 英飞凌 | | ||
NPN general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage | KEXIN 科信电子 | | ||
PNP general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage | KEXIN 科信电子 | | ||
NPN general-purpose double transistors Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
PNP general-purpose double transistors Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) NPN Silicon Double Transistors Preliminary Data ●To be used as a current mirror ●Good thermal coupling andVBEmatching ●High current gain ●Low emitter-saturation voltage | SIEMENS 西门子 | | ||
NPN Silicon Double Transistor NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBEmatching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 | Infineon 英飞凌 | | ||
NPN general purpose double transistor DESCRIPTION NPN double transistor in a SOT143B plastic package. PNP complement: BCV62. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pairs. APPLICATIONS • For use in applications where the working point must be independent of temperature • | Philips 飞利浦 | | ||
NPN general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage | KEXIN 科信电子 | | ||
PNP general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage | KEXIN 科信电子 | | ||
NPN general-purpose double transistors Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
PNP general-purpose double transistors Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
封装/外壳：TO-253-4，TO-253AA 包装：管件 描述：TRANS NPN 30V 100MA DUAL SOT143B 分立半导体产品 晶体管 - 特殊用途 | ETC 知名厂家 | ETC | | |
NPN Silicon Double Transistor 文件：181.56 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
NPN Silicon Double Transistor 文件：536.49 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
NPN general-purpose double transistors 文件：147.31 Kbytes Page：13 Pages | Philips 飞利浦 | | ||
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
封装/外壳：TO-253-4，TO-253AA 包装：管件 描述：TRANS NPN 30V 100MA DUAL SOT143B 分立半导体产品 晶体管 - 特殊用途 | ETC 知名厂家 | ETC | | |
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
NPN Silicon Double Transistor 文件：181.56 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
NPN Silicon Double Transistor 文件：536.49 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
NPN Silicon Double Transistor 文件：181.56 Kbytes Page：7 Pages | Infineon 英飞凌 | | ||
NPN Silicon Double Transistor 文件：536.49 Kbytes Page：7 Pages | Infineon 英飞凌 | |
BCV61产品属性
- 类型
描述
- 型号
BCV61
- 制造商
NXP Semiconductors
- 功能描述
Bipolar Junction Transistor, Array, SOT-143
- 制造商
Siemens
- 功能描述
Bipolar Junction Transistor, Array, SOT-143
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia(安世) |
24+ |
SOT-143 |
7957 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
INFINEON |
23+ |
SOT-4 |
20000 |
全新原装假一赔十 |
|||
nexperi |
24+ |
SOT-143 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
恩XP |
25+ |
SOT143 |
880000 |
明嘉莱只做原装正品现货 |
|||
PHI |
25+ |
SOT143 |
54815 |
百分百原装现货,实单必成,欢迎询价 |
|||
恩XP |
25+ |
SOT-143 |
32000 |
NXP/恩智浦全新特价BCV61即刻询购立享优惠#长期有货 |
|||
24+ |
SOT143 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
||||
PHI |
93+ |
SOT343 |
4370 |
全新原装进口自己库存优势 |
|||
安世 |
24+ |
SOT23 |
5000 |
十年沉淀唯有原装 |
|||
INFINEON |
1532+ |
SOT-143 |
800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
BCV61规格书下载地址
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DdatasheetPDF页码索引
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