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BCV61晶体管资料

BCV61别名：BCV61三极管、BCV61晶体管、BCV61晶体三极管
BCV61生产厂家：
BCV61制作材料：Si-NPN
BCV61性质：表面帖装型（SMD）_TEMP_KOMP
BCV61封装形式：贴片封装
BCV61极限工作电压：50V
BCV61最大电流允许值：0.1A
BCV61最大工作频率：300MHZ
BCV61引脚数：4
BCV61最大耗散功率：
BCV61放大倍数：
BCV61图片代号：H-17
BCV61vtest：50
BCV61htest：300000000
BCV61atest：0.1
BCV61wtest：0

BCV61代换 BCV61用什么型号代替：

BCV61价格

参考价格：￥0.5366

型号：BCV61,215 品牌：NXP 备注：这里有BCV61多少钱，2026年最近7天走势，今日出价，今日竞价，BCV61批发/采购报价，BCV61行情走势销售排行榜，BCV61报价。

型号	功能描述	生产厂家企业	LOGO
BCV61	丝印代码：1M*；NPN general purpose double transistor DESCRIPTION NPN double transistor in a SOT143B plastic package. PNP complement: BCV62. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pairs. APPLICATIONS • For use in applications where the working point must be independent of temperature •	PHILIPS 飞利浦	PHILIPS
BCV61	NPN Silicon Double Transistor NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBEmatching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101	INFINEON 英飞凌	INFINEON
BCV61	丝印代码：3MP；PNP general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage	KEXIN 科信电子	KEXIN
BCV61	丝印代码：1MP；NPN general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage	KEXIN 科信电子	KEXIN
BCV61	NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) NPN Silicon Double Transistors Preliminary Data ●To be used as a current mirror ●Good thermal coupling andVBEmatching ●High current gain ●Low emitter-saturation voltage	SIEMENS 西门子	SIEMENS
BCV61	丝印代码：1M；NPN general-purpose double transistors Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs	NEXPERIA 安世	NEXPERIA
BCV61	PNP general-purpose double transistors Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package	NEXPERIA 安世	NEXPERIA
BCV61	NPN general-purpose double transistors NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. • Low current (max. 100 mA)\n• Low voltage (max. 30 V)\n• Matched pairs\n• AEC-Q101 qualified;	NEXPERIA 安世	NEXPERIA
BCV61	30V,0.1A,Medium Power NPN Bipolar Transistor	GALAXY 银河微电	GALAXY
BCV61	NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)	INFINEON 英飞凌	INFINEON
BCV61	NPN Silicon Double Transistor 文件：181.56 Kbytes Page：7 Pages	INFINEON 英飞凌	INFINEON
BCV61A	丝印代码：1J*；NPN Silicon Double Transistor NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBEmatching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101	INFINEON 英飞凌	INFINEON
BCV61A	丝印代码：1J-；NPN general purpose double transistor DESCRIPTION NPN double transistor in a SOT143B plastic package. PNP complement: BCV62. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pairs. APPLICATIONS • For use in applications where the working point must be independent of temperature •	PHILIPS 飞利浦	PHILIPS
BCV61A	丝印代码：1J；NPN general-purpose double transistors Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs	NEXPERIA 安世	NEXPERIA
BCV61A	PNP general-purpose double transistors Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package	NEXPERIA 安世	NEXPERIA
BCV61A	丝印代码：1JP；NPN general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage	KEXIN 科信电子	KEXIN
BCV61A	丝印代码：3JP；PNP general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage	KEXIN 科信电子	KEXIN
BCV61A	NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) NPN Silicon Double Transistors Preliminary Data ●To be used as a current mirror ●Good thermal coupling andVBEmatching ●High current gain ●Low emitter-saturation voltage	SIEMENS 西门子	SIEMENS
BCV61B	丝印代码：1KP；NPN general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage	KEXIN 科信电子	KEXIN
BCV61B	丝印代码：3KP；PNP general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage	KEXIN 科信电子	KEXIN
BCV61B	NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) NPN Silicon Double Transistors Preliminary Data ●To be used as a current mirror ●Good thermal coupling andVBEmatching ●High current gain ●Low emitter-saturation voltage	SIEMENS 西门子	SIEMENS
BCV61B	丝印代码：1K；NPN general-purpose double transistors Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs	NEXPERIA 安世	NEXPERIA
BCV61B	PNP general-purpose double transistors Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package	NEXPERIA 安世	NEXPERIA
BCV61B	丝印代码：1K-；NPN general purpose double transistor DESCRIPTION NPN double transistor in a SOT143B plastic package. PNP complement: BCV62. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pairs. APPLICATIONS • For use in applications where the working point must be independent of temperature •	PHILIPS 飞利浦	PHILIPS
BCV61B	丝印代码：1Ks；NPN Silicon Double Transistor NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBEmatching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101	INFINEON 英飞凌	INFINEON
BCV61C	丝印代码：1Lt；NPN Silicon Double Transistor NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBEmatching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101	INFINEON 英飞凌	INFINEON
BCV61C	丝印代码：1L*；NPN general purpose double transistor DESCRIPTION NPN double transistor in a SOT143B plastic package. PNP complement: BCV62. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pairs. APPLICATIONS • For use in applications where the working point must be independent of temperature •	PHILIPS 飞利浦	PHILIPS
BCV61C	丝印代码：1L；NPN general-purpose double transistors Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs	NEXPERIA 安世	NEXPERIA
BCV61C	PNP general-purpose double transistors Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package	NEXPERIA 安世	NEXPERIA
BCV61C	NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) NPN Silicon Double Transistors Preliminary Data ●To be used as a current mirror ●Good thermal coupling andVBEmatching ●High current gain ●Low emitter-saturation voltage	SIEMENS 西门子	SIEMENS
BCV61C	丝印代码：1LP；NPN general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage	KEXIN 科信电子	KEXIN
BCV61C	丝印代码：3LP；PNP general purpose double transistor ■ Features ● High current gain ● Low collector-emitter saturation voltage	KEXIN 科信电子	KEXIN
BCV61,235	封装/外壳：TO-253-4，TO-253AA 包装：管件描述：TRANS NPN 30V 100MA DUAL SOT143B 分立半导体产品晶体管 - 特殊用途	ETC 知名厂家	ETC
BCV61_07	NPN Silicon Double Transistor 文件：181.56 Kbytes Page：7 Pages	INFINEON 英飞凌	INFINEON
BCV61_11	NPN Silicon Double Transistor 文件：536.49 Kbytes Page：7 Pages	INFINEON 英飞凌	INFINEON
BCV61_15	NPN general-purpose double transistors 文件：147.31 Kbytes Page：13 Pages	PHILIPS 飞利浦	PHILIPS
BCV61A	丝印代码：1J-；Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages	PHILIPS 飞利浦	PHILIPS
BCV61A,215	封装/外壳：TO-253-4，TO-253AA 包装：管件描述：TRANS NPN 30V 100MA DUAL SOT143B 分立半导体产品晶体管 - 特殊用途	ETC 知名厂家	ETC
BCV61B	丝印代码：1Ks；NPN Silicon Double Transistor 文件：536.49 Kbytes Page：7 Pages	INFINEON 英飞凌	INFINEON
BCV61B	丝印代码：1Ks；NPN Silicon Double Transistor 文件：181.56 Kbytes Page：7 Pages	INFINEON 英飞凌	INFINEON
BCV61B	丝印代码：1K-；Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages	PHILIPS 飞利浦	PHILIPS
BCV61C	丝印代码：1Lt；NPN Silicon Double Transistor 文件：536.49 Kbytes Page：7 Pages	INFINEON 英飞凌	INFINEON
BCV61C	丝印代码：1Lt；NPN Silicon Double Transistor 文件：181.56 Kbytes Page：7 Pages	INFINEON 英飞凌	INFINEON
BCV61C	丝印代码：1L*；Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages	PHILIPS 飞利浦	PHILIPS

BCV61产品属性

类型
描述
Package name：
SOT143B
Size (mm)：
2.9 x 1.3 x 1
Polarity：
NPN
VCEO [max] (V)：
30
IC [max] (mA)：
100
hFE [min]：
110
hFE [max]：
800

BCV61供应商更多...

更新时间：2026-5-14 22:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	BCV61,235	Nexperia(安世)	24+	SOT-143	7957	原厂订货渠道,支持BOM配单一站式服务	询价
上海意淼电子科技有限公司	BCV61	PHI	23+	SOT343	20000	全新原装假一赔十	询价
深圳市纳艾斯科技有限公司	BCV61	恩XP	24+	SOT-143	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市润联芯城科技有限公司	BCV61	恩XP	22+	SOT-143	32268	只做原装正品	询价
中天科工半导体（深圳）有限公司	BCV61	恩XP	25+	SOT-143	32000	NXP/恩智浦全新特价BCV61即刻询购立享优惠#长期有货	询价
深圳市联世界科技有限公司	BCV61	PHI	24+/25+		1500	原装正品现货库存价优	询价
深圳市华康联电子科技有限公司	BCV61	Nexperia	25+	N/A	20000		询价
深圳市腾亿芯科技有限公司	BCV61,215	Nexperia	26+	Modules	100000	现货~进口原装\|遥遥领先	询价
深圳市赛特兴科技有限公司	BCV61	恩XP	23+	标准封装	6000	正规渠道,只有原装!	询价
深圳市宇创芯科技有限公司	BCV61	恩XP	24+	N/A	16000	原装正品现货支持实单	询价

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找IC，尽在114IC

BCV61晶体管资料

BCV61价格

BCV61产品属性

BCV61供应商更多...

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BCV61规格书下载地址

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