丝印代码：1K-；NPN general purpose double transistor

DESCRIPTION NPN double transistor in a SOT143B plastic package. PNP complement: BCV62. FEATURES • Low current (max. 100 mA) • Low voltage (max. 30 V) • Matched pairs. APPLICATIONS • For use in applications where the working point must be independent of temperature •

丝印代码：1Ks；NPN Silicon Double Transistor

NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBEmatching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

丝印代码：1KP；NPN general purpose double transistor

■ Features ● High current gain ● Low collector-emitter saturation voltage

丝印代码：3KP；PNP general purpose double transistor

■ Features ● High current gain ● Low collector-emitter saturation voltage

NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching)

NPN Silicon Double Transistors Preliminary Data ●To be used as a current mirror ●Good thermal coupling andVBEmatching ●High current gain ●Low emitter-saturation voltage

丝印代码：1K；NPN general-purpose double transistors

Features * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs

PNP general-purpose double transistors

Features and benefits * Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs * AEC-Q101 qualified * Small SMD plastic package

NPN general-purpose double transistors

NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package. • Low current (max. 100 mA)\n• Low voltage (max. 30 V)\n• Matched pairs\n• AEC-Q101 qualified;

Transistors for Current Mirror Application

NPN Silicon Double Transistor · To be used as a current mirror\n · Good thermal coupling and VBE matching\n · High current gain\n · Low collector-emitter saturation voltage\n · Pb-free (RoHS compliant) package\n · Qualified according AEC Q101;

30V,0.1A,Medium Power NPN Bipolar Transistor

丝印代码：1Ks；NPN Silicon Double Transistor

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丝印代码：1Ks；NPN Silicon Double Transistor

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丝印代码：1K-；Low VCEsat (BISS) transistors

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封装/外壳：TO-253-4，TO-253AA 包装：管件 描述：TRANS NPN 30V 100MA DUAL SOT143B 分立半导体产品 晶体管 - 特殊用途

封装/外壳：TO-253-4，TO-253AA 包装：管件 描述：TRANSISTOR NPN DOUBLE SOT-143 分立半导体产品 晶体管 - 特殊用途