BCR183晶体管资料
BCR183别名：BCR183三极管、BCR183晶体管、BCR183晶体三极管
BCR183生产厂家：
BCR183制作材料：Si-P+R
BCR183性质：表面帖装型 （SMD）
BCR183封装形式：贴片封装
BCR183极限工作电压：50V
BCR183最大电流允许值：0.1A
BCR183最大工作频率：<1MHZ或未知
BCR183引脚数：3
BCR183最大耗散功率：
BCR183放大倍数：
BCR183图片代号：H-15
BCR183vtest：50
BCR183htest：999900
- BCR183atest：0.1
BCR183wtest：0
BCR183代换 BCR183用什么型号代替：DTA114EK,KSR2102,RN2402,UN2114,
BCR183价格
参考价格：￥0.1150
型号：BCR183E6327 品牌：INF 备注：这里有BCR183多少钱，2026年最近7天走势，今日出价，今日竞价，BCR183批发/采购报价，BCR183行情走势销售排行榜，BCR183报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BCR183 | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 10kΩ, R2 = 10kΩ) | SIEMENS 西门子 |   | |
BCR183 | PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | |
BCR183 | PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | |
BCR183 | AF 数字晶体管 PNP硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• BCR183S / U：两个内部隔离的晶体管，在一个多芯片封装中具有良好的匹配性\n• 无铅（符合 RoHS 标准）封装\n• 符合 AEC Q101 要求; | INFINEON 英飞凌 | | |
BCR183 | PNP Silicon Digital Transistor 文件：240.01 Kbytes Page：14 Pages | INFINEON 英飞凌 | | |
BCR183 | 丝印代码：WMs；PNP Silicon Digital Transistor 文件：897.79 Kbytes Page：12 Pages | INFINEON 英飞凌 | | |
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor Array PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1= 10kΩ, R2= 10kΩ) | SIEMENS 西门子 | | ||
AF 数字晶体管 PNP硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• BCR183S / U：两个内部隔离的晶体管，在一个多芯片封装中具有良好的匹配性\n• 无铅（符合 RoHS 标准）封装 1)\n• 符合 AEC Q101 要求; | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor Array PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1 = 10kΩ, R2 = 10kΩ) | SIEMENS 西门子 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：240.01 Kbytes Page：14 Pages | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：897.79 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PREBIAS PNP SOT23 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | INFINEON 英飞凌 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PREBIAS PNP 200MW SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：240.01 Kbytes Page：14 Pages | INFINEON 英飞凌 | | ||
丝印代码：WMs；PNP Silicon Digital Transistor 文件：897.79 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：240.01 Kbytes Page：14 Pages | INFINEON 英飞凌 | | ||
丝印代码：WMs；PNP Silicon Digital Transistor 文件：897.79 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：240.01 Kbytes Page：14 Pages | INFINEON 英飞凌 | | ||
丝印代码：WMs；PNP Silicon Digital Transistor 文件：897.79 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：240.01 Kbytes Page：14 Pages | INFINEON 英飞凌 | | ||
Digital Transistor | INFINEON 英飞凌 | | ||
Amplifier Transistors(NPN) Aplifier Transistors NPN Silicon | MOTOROLA 摩托罗拉 | | ||
Silicon NPN Planar RF Transistor Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Silicon NPN Planar RF Transistor Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. | VISHAYVishay Siliconix 威世威世科技公司 | | ||
LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol | MOTOROLA 摩托罗拉 | | ||
Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA | NTE | |
BCR183产品属性
- 类型
描述
- hFEmin：
30
- ICBOmax：
100 nA
- Ptotmax：
200 mW
- R1 / R2：
1
- R1：
10 kΩ
- R2：
10 kΩ
- VCBOmax：
50 V
- VCE(sat)max：
0.3 V
- VCEOmax：
50 V
- VEBOmax：
10 V
- Vi (off) max：
1.5 100µA / 5V
- Vi (on)max：
1.5 V
- Vi (on)min：
1 2mA / 0.3V
- Mounting：
SMT
- Polarity：
PNP (Single)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2026+ |
SOT23 |
61000 |
原装正品 假一罚十! |
|||
INFINEON/英飞凌 |
25+ |
SOT323 |
39327 |
INFINEON/英飞凌全新特价BCR183W即刻询购立享优惠#长期有货 |
|||
Infineon(英飞凌) |
25+ |
SOT-23 |
12000 |
原装品质,专业护航,省心采购 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
Infineon(英飞凌) |
23+ |
SOT-23 |
19850 |
原装正品,假一赔十 |
|||
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
|||
INFINEON |
16+ |
SOT323 |
27000 |
进口原装现货/价格优势! |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
INFINEON/英飞凌 |
2450+ |
SOT363 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
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BCR183规格书下载地址
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DdatasheetPDF页码索引
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