PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor (R1= 10kΩ, R2= 10kΩ)

PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

PNP Silicon Digital Transistor Array

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 10kΩ , R2 = 10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

AF 数字晶体管

PNP硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• BCR183S / U：两个内部隔离的晶体管，在一个多芯片封装中具有良好的匹配性\n• 无铅（符合 RoHS 标准）封装 1)\n• 符合 AEC Q101 要求;

丝印代码：WMs；PNP Silicon Digital Transistor

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PNP Silicon Digital Transistor

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Amplifier Transistors(NPN)

Aplifier Transistors NPN Silicon

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Low noise figure ● High transition frequency fT = 8 GHz Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA.

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features: • DC Current Gain Specified to 10A • High Current Gain–Bandwidth Product: fT = 2MHz (Min) @ IC = 500mA