BCR169晶体管资料
BCR169别名：BCR169三极管、BCR169晶体管、BCR169晶体三极管
BCR169生产厂家：
BCR169制作材料：Si-P+R
BCR169性质：表面帖装型 （SMD）
BCR169封装形式：贴片封装
BCR169极限工作电压：50V
BCR169最大电流允许值：0.1A
BCR169最大工作频率：<1MHZ或未知
BCR169引脚数：3
BCR169最大耗散功率：
BCR169放大倍数：
BCR169图片代号：H-15
BCR169vtest：50
BCR169htest：999900
- BCR169atest：0.1
BCR169wtest：0
BCR169代换 BCR169用什么型号代替：DTA143TK,KSR2109,RN2401,UN2116,
BCR169价格
参考价格：￥0.1310
型号：BCR169E6327 品牌：Infineon 备注：这里有BCR169多少钱，2026年最近7天走势，今日出价，今日竞价，BCR169批发/采购报价，BCR169行情走势销售排行榜，BCR169报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BCR169 | PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7k Ω) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 |   | |
BCR169 | PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ) | SIEMENS 西门子 | | |
BCR169 | AF 数字晶体管 PNP硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• BCR169S：两个内部隔离的晶体管，在一个多芯片封装中具有良好的匹配性\n• 无铅（符合 RoHS 标准）封装\n• 符合 AEC Q101 要求; | INFINEON 英飞凌 | | |
BCR169 | 丝印代码：WSs；PNP Silicon Digital Transistor 文件：873.09 Kbytes Page：11 Pages | INFINEON 英飞凌 | | |
BCR169 | PNP Silicon Digital Transistor 文件：259.39 Kbytes Page：12 Pages | INFINEON 英飞凌 | | |
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7k Ω) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7k Ω) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7k Ω) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor Array PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7k Ω) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R1=4.7kΩ) | SIEMENS 西门子 | | ||
AF 数字晶体管 PNP硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• BCR169S：两个内部隔离、匹配良好的晶体管，采用一个多芯片封装\n• 无铅（符合 RoHS 标准）封装 1)\n• 符合 AEC Q101 要求; | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7k Ω) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7k Ω) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7k Ω) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
丝印代码：WSs；PNP Silicon Digital Transistor PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7k Ω) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7kΩ) | SIEMENS 西门子 | | ||
PNP Silicon Digital Transistor 文件：259.39 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：873.09 Kbytes Page：11 Pages | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：259.39 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
丝印代码：WSs；PNP Silicon Digital Transistor 文件：873.09 Kbytes Page：11 Pages | INFINEON 英飞凌 | | ||
PNP Silicon Digital Transistor 文件：259.39 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
丝印代码：WSs；PNP Silicon Digital Transistor 文件：259.39 Kbytes Page：12 Pages | INFINEON 英飞凌 | | ||
丝印代码：WSs；PNP Silicon Digital Transistor 文件：873.09 Kbytes Page：11 Pages | INFINEON 英飞凌 | | ||
AF 数字晶体管 | INFINEON 英飞凌 | | ||
封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS PNP 250MW SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | INFINEON 英飞凌 | | ||
封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS PNP 250MW SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | INFINEON 英飞凌 | | ||
Plastic Medium Power Silicon NPN Transistor Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 165, 169 | MOTOROLA 摩托罗拉 | | ||
Thyristor logic level GENERAL DESCRIPTION Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly to microcontrollers, logic integrated circuits and | PHILIPS 飞利浦 | | ||
Single Phase Bridge Rectifier 2.0 Amp Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak) | NTE | | ||
Precision Voltage Reference 文件：262.98 Kbytes Page：14 Pages | NSC 国半 | | ||
Precision Voltage Reference 文件：262.98 Kbytes Page：14 Pages | NSC 国半 | |
BCR169产品属性
- 类型
描述
- hFE：
120 to 630
- ICBOmax：
100 nA
- Ptotmax：
200 mW
- R1：
4.7 kΩ
- VCBOmax：
50 V
- VCE(sat)max：
0.3 V
- VCEOmax：
50 V
- VEBOmax：
5 V
- Vi (off) max：
0.8 100µA / 5V
- Vi (on)max：
0.8 V
- Vi (on)min：
0.5 2mA / 0.3V
- Mounting：
SMT
- Polarity：
PNP (Single)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2016+ |
SOT363 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INFINEO |
24+ |
SOT363 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
25+ |
SOT-363 |
32000 |
INFINEON/英飞凌全新特价BCR169S即刻询购立享优惠#长期有货 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
INFIEON |
25+ |
TSFP-3 |
2987 |
绝对全新原装现货供应! |
|||
INFINEON/英飞凌 |
25+ |
SOT363 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
INF |
24+ |
NA |
7000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
INFINEON |
SOT236 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
INFINEON |
26+ |
Sod-123 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
INFINEON/英飞凌 |
25+ |
SOT23 |
15000 |
全新原装现货,价格优势 |
BCR169规格书下载地址
BCR169参数引脚图相关
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DdatasheetPDF页码索引
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