PNP Silicon Digital Transistor Array

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7k Ω) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

PNP Silicon Digital Transistor

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 = 4.7k Ω) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R1=4.7kΩ)

AF 数字晶体管

PNP硅数字晶体管 • 开关电路、逆变器、接口电路、驱动电路\n• BCR169S：两个内部隔离、匹配良好的晶体管，采用一个多芯片封装\n• 无铅（符合 RoHS 标准）封装 1)\n• 符合 AEC Q101 要求;

PNP Silicon Digital Transistor

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丝印代码：WSs；PNP Silicon Digital Transistor

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Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 165, 169

Thyristor logic level

GENERAL DESCRIPTION Glass passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly to microcontrollers, logic integrated circuits and

Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)

Precision Voltage Reference

文件：262.98 Kbytes Page：14 Pages

Precision Voltage Reference

文件：262.98 Kbytes Page：14 Pages