BCR116晶体管资料
BCR116别名：BCR116三极管、BCR116晶体管、BCR116晶体三极管
BCR116生产厂家：
BCR116制作材料：Si-N+R
BCR116性质：表面帖装型 （SMD）
BCR116封装形式：贴片封装
BCR116极限工作电压：50V
BCR116最大电流允许值：0.1A
BCR116最大工作频率：<1MHZ或未知
BCR116引脚数：3
BCR116最大耗散功率：
BCR116放大倍数：
BCR116图片代号：H-15
BCR116vtest：50
BCR116htest：999900
- BCR116atest：0.1
BCR116wtest：0
BCR116代换 BCR116用什么型号代替：DTC143ZK,KSR1114,RN1406,2SC4146,
BCR116价格
参考价格：￥0.1150
型号：BCR116E6327 品牌：INF 备注：这里有BCR116多少钱，2026年最近7天走势，今日出价，今日竞价，BCR116批发/采购报价，BCR116行情走势销售排行榜，BCR116报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BCR116 | NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) | SIEMENS 西门子 |   | |
BCR116 | NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | |
BCR116 | NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ) • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see packa | INFINEON 英飞凌 | | |
BCR116 | Digital Transistor Features Epitaxial planar die construction © Buin biasing resistors (Ri: 4.7K, Ry: 47kQ) © Also avaiable in ead free version | «RotS compliant wih Halogen-ree | | TECHPUBLIC 台舟电子 | | |
BCR116 | AF 数字晶体管 NPN硅数字晶体管 • 开关电路、逆变器、接口电路、驱动器电路\n• BCR116S：两个内部隔离的晶体管，在一个多芯片封装中具有良好的匹配性\n• 无铅（符合 RoHS 标准）封装\n• 符合 AEC Q101 要求; | INFINEON 英飞凌 | | |
BCR116 | NPN Silicon Digital Transistor 文件：231.57 Kbytes Page：14 Pages | INFINEON 英飞凌 | | |
NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ) • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see packa | INFINEON 英飞凌 | | ||
AF 数字晶体管 NPN硅数字晶体管 • 开关电路、逆变器、接口电路、驱动器电路\n• BCR116S：两个内部隔离的晶体管，在一个多芯片封装中具有良好的匹配性\n• 无铅（符合 RoHS 标准）封装\n• 符合 AEC Q101 要求; | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ) • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see packa | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) | SIEMENS 西门子 | | ||
NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ) • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see packa | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ) • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see packa | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor 文件：231.57 Kbytes Page：14 Pages | INFINEON 英飞凌 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 50V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | INFINEON 英飞凌 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 200MW SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor 文件：231.57 Kbytes Page：14 Pages | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor 文件：231.57 Kbytes Page：14 Pages | INFINEON 英飞凌 | | ||
NPN Silicon Digital Transistor 文件：231.57 Kbytes Page：14 Pages | INFINEON 英飞凌 | | ||
AF 数字晶体管 | INFINEON 英飞凌 | | ||
Rectifier diodes Schottky barrier GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p | PHILIPS 飞利浦 | | ||
General Purpose Silicon Rectifier Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications. | NTE | | ||
Plastic Medium-Power Complementary Silicon Transistors Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS(2.0A,60-100V,50W)
| MOSPEC 统懋 | | ||
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
| MOTOROLA 摩托罗拉 | |
BCR116产品属性
- 类型
描述
- hFEmin：
70
- ICBOmax：
100 nA
- Ptotmax：
200 mW
- R1 / R2：
0.1
- R1：
4.7 kΩ
- R2：
47 kΩ
- VCBOmax：
50 V
- VCE(sat)max：
0.3 V
- VCEOmax：
50 V
- VEBOmax：
5 V
- Vi (off) max：
0.8 100µA / 5V
- Vi (on)max：
0.8 V
- Vi (on)min：
0.5 2mA / 0.3V
- Mounting：
SMT
- Polarity：
NPN (Single)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
25+ |
N/A |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
Infineon |
25+ |
SOT23 |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
INFINEON/英飞凌 |
2025+ |
SOT363 |
1837 |
原装进口价格优 请找坤融电子! |
|||
INFINEON |
24+ |
SOT-23 |
8239 |
新进库存/原装 |
|||
INFINEON |
23+ |
SOT-23 |
90000 |
||||
Infineon/英飞凌 |
2019+ |
SOT323 |
36000 |
原盒原包装 可BOM配套 |
|||
INFINEON |
17+ |
SOT23 |
6200 |
100%原装正品现货 |
|||
Infineon(英飞凌) |
23+ |
标准封装 |
7000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
CHN |
26+ |
DO-15 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
INFINEON |
16+ |
SOT-523 |
21000 |
进口原装现货/价格优势! |
BCR116规格书下载地址
BCR116参数引脚图相关
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DdatasheetPDF页码索引
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