NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ)

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ) • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see packa

Digital Transistor

Features Epitaxial planar die construction © Buin biasing resistors (Ri: 4.7K, Ry: 47kQ) © Also avaiable in ead free version | «RotS compliant wih Halogen-ree |

AF 数字晶体管

NPN Silicon Digital Transistor

文件：231.57 Kbytes Page：14 Pages

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ) • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see packa

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ) • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see packa

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ)

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ) • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see packa

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ) • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see packa

NPN Silicon Digital Transistor

文件：231.57 Kbytes Page：14 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 50V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 200MW SOT23-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

NPN Silicon Digital Transistor

文件：231.57 Kbytes Page：14 Pages

NPN Silicon Digital Transistor

文件：231.57 Kbytes Page：14 Pages

AF 数字晶体管

AF 数字晶体管

NPN Silicon Digital Transistor

文件：231.57 Kbytes Page：14 Pages

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

General Purpose Silicon Rectifier

Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS