NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ)

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ) • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see packa

AF 数字晶体管

NPN Silicon Digital Transistor

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NPN Silicon Digital Transistor

NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=4.7 kΩ, R2=47 kΩ) • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see packa

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS NPN 250MW SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：SC-70，SOT-323 包装：卷带（TR） 描述：TRANS PREBIAS NPN 250MW SOT323-3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting p

General Purpose Silicon Rectifier

Description: The NTE116 is a general purpose silicon rectifier in a DO–41 case designed for low power and switching applications.

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS