MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. • High Curre

PNP Silicon Epitaxial Transistor

This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: IC = −1.0 A • The SOT−223 Package can be soldered using wave

PNP Silicon Epitaxial Transistor

This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: IC = −1.0 A • The SOT−223 Package can be soldered using wave

MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

三极管

PNP Silicon Epitaxial Transistor

文件：132.4 Kbytes Page：4 Pages

封装/外壳：TO-261-4，TO-261AA 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 20V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Silicon Epitaxial Transistor

文件：132.4 Kbytes Page：4 Pages

PNP silicon epitaxial transistor

丝印代码：BCPA9；PNP Silicon Epitaxial Transistors

文件：1.28948 Mbytes Page：9 Pages

封装/外壳：TO-261-4，TO-261AA 包装：散装 描述：TRANS PNP BIPOL 20V 1A SOT-223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个