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BCP69晶体管资料
BCP69别名：BCP69三极管、BCP69晶体管、BCP69晶体三极管
BCP69生产厂家：荷兰飞利浦公司
BCP69制作材料：Si-PNP
BCP69性质：低频或音频放大 （LF）_功率放大 （L）
BCP69封装形式：贴片封装
BCP69极限工作电压：25V
BCP69最大电流允许值：1A
BCP69最大工作频率：<1MHZ或未知
BCP69引脚数：3
BCP69最大耗散功率：1.5W
BCP69放大倍数：
BCP69图片代号：H-99
BCP69vtest：25
BCP69htest：999900
- BCP69atest：1
BCP69wtest：1.5
BCP69代换 BCP69用什么型号代替：
BCP69价格
参考价格：￥0.6467
型号：BCP69 品牌：Fairchild 备注：这里有BCP69多少钱，2024年最近7天走势，今日出价，今日竞价，BCP69批发/采购报价，BCP69行情走势销售排行榜，BCP69报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
BCP69 | PNP medium power transistor DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplement:BCP68. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.20V). APPLICATIONS •Generalpurposeswitchingandamplification •Powerapplicationssuchasaudiooutputstages. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  |   |
BCP69 | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES *ForAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat) COMPLEMENTARYTYPEBCP68 PARTMARKINGDETAILBCP69 BCP69-25 | Zetex Zetex Semiconductors |  | |
BCP69 | PNP Silicon AF Transistor (For general AF application High collector current High current gain) PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN) | SIEMENS Siemens Ltd |  | |
BCP69 | PNP Silicon AF Transistor PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
BCP69 | PNP Silicon Epitaxial Transistor PNPSiliconEpitaxialTransistor P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 |  | |
BCP69 | PNP MEDIUM POWER TRANSISTOR FEATURES *Highcurrent(max.1A) *Lowvoltage(max.20V). *ComplementarytoUTCBCP68 APPLICATIONS *Generalpurposeswitchingandamplification *Powerapplicationssuchasaudiooutputstages. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | |
BCP69 | PNP General Purpose Amplifier PNPGeneralPurposeAmplifier •Thisdeviceisdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.0A. •SourcedfromProcess77. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
BCP69 | 20 V, 1 A PNP medium power transistor Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | |
BCP69 | PNP Medium Power Transistor ■Features ●Highcurrent(max.1A) ●Lowvoltage(max.20V) ●ComplementstoBCP68 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  | |
BCP69 | Silicon Epitaxial Transistor Description TheBCP69isdesignedforguseinlowvoltageandmediumpowerapplications. Features *VCEO:-20V *IC:1A | SECOS SeCoS Halbleitertechnologie GmbH |  | |
BCP69 | 20 V, 2 A NPN medium power transistors Featuresandbenefits Highcurrent Twocurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | |
BCP69 | 20 V, 2 A PNP medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
BCP69 | SOT-223 Plastic-Encapsulate Transistors FEATURES HighCurrentandLowVoltage NPNComplement:BCP68 APPLICATIONS GeneralPurposeSwitchingandAmplification PowerApplicationsSuchasAudioOutputStages | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | |
BCP69 | SOT-223 Plastic-Encapsulate Transistors TRANSISTOR(PNP) EATURES ●HighCurrentandLowVoltage ●NPNComplement:BCP68 APPLICATIONS ●GeneralPurposeSwitchingandAmplification ●PowerApplicationsSuchasAudioOutputStages | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | |
BCP69 | High current, Three current gain selections Features ●Highcurrent. ●Threecurrentgainselections. ●1.4Wtotalpowerdissipaton. | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 |  | |
BCP69 | 20 V, 2 A PNP medium power transistors Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | |
BCP69 | NPN medium power transistor 20 V, 1 A 文件：173.48 Kbytes Page：12 Pages | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | |
BCP69 | PNP Transistors 文件：833.62 Kbytes Page：2 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | | |
BCP69 | FAIRCHILD Small Signal Transistors 文件：628.43 Kbytes Page：1 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
BCP69 | PNP Silicon Epitaxial Transistors 文件：1.28948 Mbytes Page：9 Pages | FUTUREWAFER FutureWafer Tech Co.,Ltd |  | |
BCP69 | 封装/外壳：TO-261-4，TO-261AA 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 20V 1.5A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
BCP69 | PNP MEDIUM POWER TRANSISTOR 文件：98.39 Kbytes Page：3 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN) | SIEMENS Siemens Ltd | | | |
PNP Silicon AF Transistor PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
PNP medium power transistor DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplement:BCP68. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.20V). APPLICATIONS •Generalpurposeswitchingandamplification •Powerapplicationssuchasaudiooutputstages. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN) | SIEMENS Siemens Ltd | | | |
PNP Silicon AF Transistor PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
20 V, 1 A PNP medium power transistor Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
20 V, 2 A PNP medium power transistors Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
20 V, 2 A PNP medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 1 A PNP medium power transistor Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
20 V, 1 A PNP medium power transistor Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
NPN GENERAL PURPOSE AMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
NPN GENERAL PURPOSE AMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
NPN GENERAL PURPOSE AMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
PNP medium power transistor DESCRIPTION PNPmediumpowertransistorinaSOT223plasticpackage.NPNcomplement:BCP68. FEATURES •Highcurrent(max.1A) •Lowvoltage(max.20V). APPLICATIONS •Generalpurposeswitchingandamplification •Powerapplicationssuchasaudiooutputstages. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES *ForAFdriversandoutputstages *HighcollectorcurrentandLowVCE(sat) COMPLEMENTARYTYPEBCP68 PARTMARKINGDETAILBCP69 BCP69-25 | Zetex Zetex Semiconductors | | | |
PNP Silicon AF Transistor (For general AF application High collector current High current gain) PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN) | SIEMENS Siemens Ltd | | | |
PNP Silicon AF Transistor PNPSiliconAFTransistor ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytype:BCP68(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
20 V, 1 A PNP medium power transistor Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
20 V, 2 A PNP medium power transistors Featuresandbenefits Highcurrent Threecurrentgainselections Highpowerdissipationcapability Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 2 A PNP medium power transistors Generaldescription PNPmediumpowertransistorseriesinSurface-MountedDevice(SMD)plasticpackages. Featuresandbenefits ■Highcurrent ■Threecurrentgainselections ■Highpowerdissipationcapability ■Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT10 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | | | |
NPN GENERAL PURPOSE AMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
NPN GENERAL PURPOSE AMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
NPN GENERAL PURPOSE AMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
Silicon Epitaxial Transistor FEATURES •HighCurrentandLowVoltage APPLICATIONS •GeneralPurposeSwitchingandAmplification •PowerApplicationsSuchAsAudioOutputStages | SECOS SeCoS Halbleitertechnologie GmbH | | | |
NPN GENERAL PURPOSE AMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
NPN GENERAL PURPOSE AMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
NPN GENERAL PURPOSE AMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
NPN GENERAL PURPOSE AMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
NPN GENERAL PURPOSE AMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
NPN GENERAL PURPOSE AMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
Medium Power PNP Epitaxial Planar Transistor Features •ForAFdriverandoutputstage •Lowsaturationvoltage •Highcollectorcurrent. •ComplementarytoBCP68L3 •Pb-freepackage | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 |  | | |
NPN GENERAL PURPOSE AMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT MEDIUMPOWERPNPSILICONHIGHCURRENTTRANSISTORSURFACEMOUNT ThisPNPSiliconEpitaxialTransistorisdesignedforuseinlowvoltage,highcurrentapplications.ThedeviceishousedintheSOT-223package,whichisdesignedformediumpowersurfacemountapplications. •HighCurre | MotorolaMotorola, Inc 摩托罗拉 |  | | |
PNP Silicon Epitaxial Transistor ThisPNPSiliconEpitaxialTransistorisdesignedforuseinlowvoltage,highcurrentapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:IC=−1.0A •TheSOT−223Packagecanbesolderedusingwave | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PNP Silicon Epitaxial Transistor ThisPNPSiliconEpitaxialTransistorisdesignedforuseinlowvoltage,highcurrentapplications.ThedeviceishousedintheSOT−223package,whichisdesignedformediumpowersurfacemountapplications. Features •HighCurrent:IC=−1.0A •TheSOT−223Packagecanbesolderedusingwave | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
NPN GENERAL PURPOSE AMPLIFIER ■DESCRIPTION TheUTCBC817isdesignedforgeneralpurposemediumpoweramplifiersandswitchesrequiringcollectorcurrentsto1.2A. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 20V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
PNP Silicon AF Transistor 文件：517.909 Kbytes Page：6 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
BCP69产品属性
- 类型
描述
- 型号
BCP69
- 功能描述
两极晶体管 - BJT SOT-223 PNP GP AMP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA |
22+ |
SOT223 |
20000 |
公司100%原装现货,现货众多欢迎加Q咨询 |
|||
NEXPERIA/安世 |
23+ |
SOT223 |
20000 |
热卖优势现货 |
|||
Nexperia/安世 |
21+ |
SOT-223 |
3000 |
十年信誉,只做原装,有挂就有现货! |
|||
NXP/恩智浦 |
20+ |
SOT-223 |
5000 |
支持实单/原盒/原包/原标/进口原装 |
|||
21+ |
SOP-8 |
120000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
Nexperia(安世) |
23+ |
SOT-223 |
3727 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
NXP |
22+ |
SOT-223 |
6850 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ON |
0550+ |
SOT223 |
441 |
公司原装现货,可来看货! |
|||
ON/安森美 |
21+ |
SOT-223 |
600000 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
NXP |
21+ |
SOT223 |
60000 |
原厂订货价格优势,可开13%的增值税票 |
BCP69芯片相关品牌
BCP69规格书下载地址
BCP69参数引脚图相关
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- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
