丝印代码：BCP69；20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BCP69；20 V, 2 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in au

丝印代码：BCP69；PNP medium power transistor

■ Features ● High current (max. 1 A) ● Low voltage (max. 20 V) ● Complements to BCP68

Silicon Epitaxial Transistor

Description The BCP69 is designed for guse in low voltage and medium power applications. Features * VCEO: -20V * IC : 1A

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) EATURES ● High Current and Low Voltage ● NPN Complement:BCP68 APPLICATIONS ● General Purpose Switching and Amplification ● Power Applications Such as Audio Output Stages

PNP Medium Power Transistor

■ Features ● High current (max. 1 A) ● Low voltage (max. 20 V) ● Complements to BCP68

PNP Silicon AF Transistor (For general AF application High collector current High current gain)

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

SOT-223 Plastic-Encapsulate Transistors

FEATURES High Current and Low Voltage NPN Complement:BCP68 APPLICATIONS General Purpose Switching and Amplification Power Applications Such as Audio Output Stages

High current, Three current gain selections

Features ● High current. ● Three current gain selections. ● 1.4 W total power dissipaton.

20 V, 2 A NPN medium power transistors

Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

PNP Silicon Epitaxial Transistor

PNP Silicon Epitaxial Transistor P/b Lead(Pb)-Free

20 V, 1 A PNP medium power transistor

20 V, 2 A PNP medium power transistors

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * For AF drivers and output stages * High collector current and Low V CE(sat) COMPLEMENTARY TYPE – BCP68 PARTMARKING DETAIL – BCP69 BCP69-25

PNP General Purpose Amplifier

PNP General Purpose Amplifier • This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A. • Sourced from Process 77.

PNP medium power transistor

DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complement: BCP68. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification • Power applications such as audio output stages.

PNP Silicon AF Transistor

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

PNP MEDIUM POWER TRANSISTOR

„ FEATURES * High current (max. 1 A) * Low voltage (max. 20 V). * Complementary to UTC BCP68 ​​​​​​​ „ APPLICATIONS * General purpose switching and amplification * Power applications such as audio output stages.

PNP 双极晶体管

The PNP Bipolar Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223-4 package, which is designed for medium power surface mount applications. • High Current: IC = -1.0 Amp\n• The SOT-223 Package can be soldered using wave or reflow.\n• SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the po;

20 V, 2 A PNP medium power transistor

PNP medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. NPN complement: BCP68. • High current\n• Three current gain selections\n• High power dissipation capability\n• AEC-Q101 qualified;

PNP Low Sat Transistor

丝印代码：BCPA9；PNP Silicon Epitaxial Transistors

文件：1.28948 Mbytes Page：9 Pages

PNP MEDIUM POWER TRANSISTOR

文件：98.39 Kbytes Page：3 Pages

FAIRCHILD Small Signal Transistors

文件：628.43 Kbytes Page：1 Pages

NPN medium power transistor 20 V, 1 A

封装/外壳：TO-261-4，TO-261AA 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 20V 1.5A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Transistors

文件：833.62 Kbytes Page：2 Pages

丝印代码：BCP69/16；20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BCP69/16；20 V, 2 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in au

丝印代码：BCP69/25；20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BCP69/25；20 V, 2 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in au

PNP Silicon AF Transistor

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

PNP Silicon AF Transistor (For general AF application High collector current High current gain)

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

PNP Silicon AF Transistor

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

PNP medium power transistor

DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complement: BCP68. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification • Power applications such as audio output stages.

PNP Silicon AF Transistor (For general AF application High collector current High current gain)

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

20 V, 1 A PNP medium power transistor

20 V, 2 A PNP medium power transistors

20 V, 1 A PNP medium power transistor

20 V, 1 A PNP medium power transistor

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

20 V, 1 A PNP medium power transistor

20 V, 1 A PNP medium power transistor

20 V, 2 A PNP medium power transistors

20 V, 1 A PNP medium power transistor

PNP Silicon AF Transistor (For general AF application High collector current High current gain)

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

PNP Silicon AF Transistor

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * For AF drivers and output stages * High collector current and Low V CE(sat) COMPLEMENTARY TYPE – BCP68 PARTMARKING DETAIL – BCP69 BCP69-25

PNP medium power transistor

DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complement: BCP68. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification • Power applications such as audio output stages.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

Silicon Epitaxial Transistor

FEATURES • High Current and Low Voltage APPLICATIONS • General Purpose Switching and Amplification • Power Applications Such As Audio Output Stages

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.