丝印代码：BCP69；20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BCP69；20 V, 2 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in au

丝印代码：BCP69；PNP medium power transistor

■ Features ● High current (max. 1 A) ● Low voltage (max. 20 V) ● Complements to BCP68

Silicon Epitaxial Transistor

Description The BCP69 is designed for guse in low voltage and medium power applications. Features * VCEO: -20V * IC : 1A

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) EATURES ● High Current and Low Voltage ● NPN Complement:BCP68 APPLICATIONS ● General Purpose Switching and Amplification ● Power Applications Such as Audio Output Stages

PNP Medium Power Transistor

■ Features ● High current (max. 1 A) ● Low voltage (max. 20 V) ● Complements to BCP68

PNP Silicon AF Transistor (For general AF application High collector current High current gain)

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

SOT-223 Plastic-Encapsulate Transistors

FEATURES High Current and Low Voltage NPN Complement:BCP68 APPLICATIONS General Purpose Switching and Amplification Power Applications Such as Audio Output Stages

High current, Three current gain selections

Features ● High current. ● Three current gain selections. ● 1.4 W total power dissipaton.

20 V, 2 A NPN medium power transistors

Features and benefits  High current  Two current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

PNP Silicon Epitaxial Transistor

PNP Silicon Epitaxial Transistor P/b Lead(Pb)-Free

20 V, 1 A PNP medium power transistor

20 V, 2 A PNP medium power transistors

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * For AF drivers and output stages * High collector current and Low V CE(sat) COMPLEMENTARY TYPE – BCP68 PARTMARKING DETAIL – BCP69 BCP69-25

PNP General Purpose Amplifier

PNP General Purpose Amplifier • This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A. • Sourced from Process 77.

PNP medium power transistor

DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complement: BCP68. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification • Power applications such as audio output stages.

PNP Silicon AF Transistor

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

PNP MEDIUM POWER TRANSISTOR

„ FEATURES * High current (max. 1 A) * Low voltage (max. 20 V). * Complementary to UTC BCP68 ​​​​​​​ „ APPLICATIONS * General purpose switching and amplification * Power applications such as audio output stages.

PNP MEDIUM POWER TRANSISTOR

文件：98.39 Kbytes Page：3 Pages

FAIRCHILD Small Signal Transistors

文件：628.43 Kbytes Page：1 Pages

NPN medium power transistor 20 V, 1 A

封装/外壳：TO-261-4，TO-261AA 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 20V 1.5A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Transistors

文件：833.62 Kbytes Page：2 Pages

丝印代码：BCPA9；PNP Silicon Epitaxial Transistors

文件：1.28948 Mbytes Page：9 Pages

PNP 双极晶体管

PNP Low Sat Transistor

20 V, 2 A PNP medium power transistor

丝印代码：BCP69/16；20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BCP69/16；20 V, 2 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in au

丝印代码：BCP69/25；20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BCP69/25；20 V, 2 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in au

PNP Silicon AF Transistor

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

PNP Silicon AF Transistor (For general AF application High collector current High current gain)

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

PNP Silicon AF Transistor

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

PNP medium power transistor

DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complement: BCP68. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification • Power applications such as audio output stages.

PNP Silicon AF Transistor (For general AF application High collector current High current gain)

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

20 V, 1 A PNP medium power transistor

20 V, 2 A PNP medium power transistors

20 V, 1 A PNP medium power transistor

20 V, 1 A PNP medium power transistor

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

20 V, 1 A PNP medium power transistor

20 V, 1 A PNP medium power transistor

20 V, 2 A PNP medium power transistors

20 V, 1 A PNP medium power transistor

PNP Silicon AF Transistor (For general AF application High collector current High current gain)

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

PNP Silicon AF Transistor

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * For AF drivers and output stages * High collector current and Low V CE(sat) COMPLEMENTARY TYPE – BCP68 PARTMARKING DETAIL – BCP69 BCP69-25

PNP medium power transistor

DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complement: BCP68. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification • Power applications such as audio output stages.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

Silicon Epitaxial Transistor

FEATURES • High Current and Low Voltage APPLICATIONS • General Purpose Switching and Amplification • Power Applications Such As Audio Output Stages

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.