PNP medium power transistor

DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complement: BCP68. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification • Power applications such as audio output stages.

PNP Silicon AF Transistor (For general AF application High collector current High current gain)

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

PNP Silicon AF Transistor

PNP Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP68 (NPN)

20 V, 1 A PNP medium power transistor

20 V, 2 A PNP medium power transistors

20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

PNP Plastic-Encapsulate Transistors

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20 V, 1 A PNP medium power transistor

20 V, 1 A PNP medium power transistor

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

NPN GENERAL PURPOSE AMPLIFIER

■ DESCRIPTION The UTC BC817 is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A.

20 V, 2 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in au

20 V, 1 A PNP medium power transistor

20 V, 1 A PNP medium power transistor

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP SC73 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS PNP 20V 2A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

20 V, 2 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

20 V, 2 A PNP medium power transistors

20 V, 2 A PNP medium power transistors

Features and benefits * High collector current capability IC and ICM * Three current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical cond

20 V, 2 A PNP medium power transistors

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