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BCP68晶体管资料
BCP68别名：BCP68三极管、BCP68晶体管、BCP68晶体三极管
BCP68生产厂家：荷兰飞利浦公司
BCP68制作材料：Si-NPN
BCP68性质：低频或音频放大 （LF）_功率放大 （L）
BCP68封装形式：贴片封装
BCP68极限工作电压：20V
BCP68最大电流允许值：1A
BCP68最大工作频率：<1MHZ或未知
BCP68引脚数：3
BCP68最大耗散功率：1.5W
BCP68放大倍数：
BCP68图片代号：H-99
BCP68vtest：20
BCP68htest：999900
- BCP68atest：1
BCP68wtest：1.5
BCP68代换 BCP68用什么型号代替：
BCP68价格
参考价格：￥0.6258
型号：BCP68 品牌：Fairchild 备注：这里有BCP68多少钱，2025年最近7天走势，今日出价，今日竞价，BCP68批发/采购报价，BCP68行情走势销售排行榜，BCP68报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BCP68 | NPN medium power transistor DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complement: BCP69. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification under high current conditions. | Philips 飞利浦 |   | |
BCP68 | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat) COMPLEMENTARY TYPE - BCP69 PARTMARKING DETAIL - BCP68 BCP68 - 25 | Zetex | | |
BCP68 | NPN Silicon AF Transistor (For general AF application High collector current High current gain) NPN Silicon AF Transistor ● For general AF application ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP 69 (PNP) | SIEMENS 西门子 | | |
BCP68 | NPN General Purpose Amplifier NPN General Purpose Amplifier • This device is designed for general purpose medium power amplifiers. • Sourced from process 37. | Fairchild 仙童半导体 | | |
BCP68 | NPN Silicon AF Transistor NPN Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP69 (PNP) | Infineon 英飞凌 | | |
BCP68 | NPN MEDIUM POWER POWER NPN MEDIUM POWER TRANSISTOR FEATURES * High current (max. 1 A) * Low voltage (max. 20 V). * Complementary to UTC BCP69 APPLICATIONS * General purpose switching and amplification under high current conditions. | UTC 友顺 | | |
BCP68 | NPN Medium Power Transistor ■ Features ● High current (max. 1 A) ● Low voltage (max. 20 V) ● Complements to BCP69 | KEXIN 科信电子 | | |
BCP68 | NPN medium power transistor; 20 V, 1 A | ETC 知名厂家 | ETC | |
BCP68 | SOT-223 Plastic-Encapsulate Transistors FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP69 (PNP) | DGNJDZ 南晶电子 | | |
BCP68 | SOT-223 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP69 (PNP) | JIANGSU 长电科技 | | |
BCP68 | 20 V, 2 A NPN medium power transistors Features and benefits High current Two current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | |
BCP68 | 20 V, 2 A PNP medium power transistors Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | |
BCP68 | NPN medium power transistor 20 V, 1 A | ETC 知名厂家 | ETC | |
BCP68 | NPN MEDIUM POWER TRANSISTOR 文件：149.51 Kbytes Page：3 Pages | UTC 友顺 | | |
BCP68 | NPN Transistors 文件：811.09 Kbytes Page：2 Pages | KEXIN 科信电子 | | |
BCP68 | 20 V, 2 A NPN medium power transistors 文件：1.18878 Mbytes Page：23 Pages | Philips 飞利浦 | | |
BCP68 | NPN MEDIUM POWER TRANSISTOR 文件：151.26 Kbytes Page：3 Pages | UTC 友顺 | | |
BCP68 | 封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 1A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
BCP68 | BCP68: (Legacy Fairchild) NPN Bipolar Transistor | ONSEMI 安森美半导体 | | |
BCP68 | NPN Low Sat Transistor | DIODES 美台半导体 | | |
BCP68 | NPN Silicon AF Transistor (For general AF application High collector current High current gain) | Infineon 英飞凌 | | |
NPN Silicon AF Transistor (For general AF application High collector current High current gain) NPN Silicon AF Transistor ● For general AF application ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP 69 (PNP) | SIEMENS 西门子 | | ||
NPN Silicon AF Transistor NPN Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP69 (PNP) | Infineon 英飞凌 | | ||
NPN Silicon AF Transistor (For general AF application High collector current High current gain) NPN Silicon AF Transistor ● For general AF application ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP 69 (PNP) | SIEMENS 西门子 | | ||
NPN Silicon AF Transistor NPN Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP69 (PNP) | Infineon 英飞凌 | | ||
NPN medium power transistor DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complement: BCP69. FEATURES • High current (max. 1 A) • Low voltage (max. 20 V). APPLICATIONS • General purpose switching and amplification under high current conditions. | Philips 飞利浦 | | ||
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat) COMPLEMENTARY TYPE - BCP69 PARTMARKING DETAIL - BCP68 BCP68 - 25 | Zetex | | ||
NPN Silicon AF Transistor NPN Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP69 (PNP) | Infineon 英飞凌 | | ||
NPN medium power transistor; 20 V, 1 A | ETC 知名厂家 | ETC | | |
NPN Silicon AF Transistor NPN Silicon AF Transistor ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP69 (PNP) | Infineon 英飞凌 | | ||
NPN Silicon AF Transistor (For general AF application High collector current High current gain) NPN Silicon AF Transistor ● For general AF application ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary type: BCP 69 (PNP) | SIEMENS 西门子 | | ||
20 V, 2 A NPN medium power transistors Features and benefits High current Two current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified | NEXPERIA 安世 | | ||
20 V, 2 A NPN medium power transistors 1. General description NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Qualified accordin | NEXPERIA 安世 | | ||
20 V, 2 A NPN medium power transistors 1. General description NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Qualified accordin | NEXPERIA 安世 | | ||
20 V, 2 A NPN medium power transistors 1. General description NPN medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Two current gain selections • High power dissipation capability • Qualified accordin | NEXPERIA 安世 | | ||
MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. • High Current: IC = 1.0 Amp • The SOT-223 Package ca | ONSEMI 安森美半导体 | | ||
MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT Npn Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. • High Current: IC = 1.0 Amp • The SOT-223 Package ca | Motorola 摩托罗拉 | | ||
NPN Silicon Epitaxial Transistor NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current • The SOT−223 Package Can Be | ONSEMI 安森美半导体 | | ||
NPN Silicon Epitaxial Transistor NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current • The SOT−223 Package Can Be | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS NPN 20V 2A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
NPN MEDIUM POWER TRANSISTOR 文件：151.26 Kbytes Page：3 Pages | UTC 友顺 | | ||
NPN MEDIUM POWER TRANSISTOR 文件：149.51 Kbytes Page：3 Pages | UTC 友顺 | | ||
20 V, 2 A NPN medium power transistors 文件：1.20026 Mbytes Page：23 Pages | Philips 飞利浦 | | ||
NPN Transistors 文件：811.09 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
NPN MEDIUM POWER TRANSISTOR 文件：182 Kbytes Page：3 Pages | UTC 友顺 | | ||
NPN Transistors 文件：811.09 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
NPN medium power transistor 20 V, 1 A | ETC 知名厂家 | ETC | | |
20 V, 2 A NPN medium power transistors 文件：1.18878 Mbytes Page：23 Pages | Philips 飞利浦 | | ||
NPN Transistors 文件：811.09 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
NPN MEDIUM POWER TRANSISTOR 文件：149.51 Kbytes Page：3 Pages | UTC 友顺 | | ||
NPN MEDIUM POWER TRANSISTOR 文件：149.51 Kbytes Page：3 Pages | UTC 友顺 | | ||
NPN MEDIUM POWER TRANSISTOR 文件：151.26 Kbytes Page：3 Pages | UTC 友顺 | | ||
NPN MEDIUM POWER TRANSISTOR 文件：182 Kbytes Page：3 Pages | UTC 友顺 | | ||
NPN MEDIUM POWER TRANSISTOR 文件：149.51 Kbytes Page：3 Pages | UTC 友顺 | | ||
NPN MEDIUM POWER TRANSISTOR 文件：149.51 Kbytes Page：3 Pages | UTC 友顺 | | ||
NPN MEDIUM POWER TRANSISTOR 文件：151.26 Kbytes Page：3 Pages | UTC 友顺 | | ||
NPN medium power transistor 20 V, 1 A | ETC 知名厂家 | ETC | | |
NPN Silicon Epitaxial Transistor 文件：109.45 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
NPN Silicon Epitaxial Transistor 文件：109.45 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | | ||
NPN Silicon Epitaxial Transistor 文件：109.45 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | |
BCP68产品属性
- 类型
描述
- 型号
BCP68
- 功能描述
两极晶体管 - BJT SOT-223 NPN GP AMP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOT-223 |
1612 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
恩XP |
2016+ |
SOT-223 |
6600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ON/安森美 |
20+ |
NA |
2000 |
||||
NEXPERIA/安世 |
23+ |
SOT-223 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
ONSEMI/安森美 |
25+ |
SOT223 |
33329 |
ONSEMI/安森美全新特价BCP68T1G即刻询购立享优惠#长期有货 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
PHI |
24+ |
SOT223 |
6850 |
只做原装正品现货或订货假一赔十! |
|||
ON |
24+ |
SOT-223 |
89000 |
全新原装现货,假一罚十 |
|||
恩XP |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
SOT-223 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
BCP68规格书下载地址
BCP68参数引脚图相关
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- BCP55/16
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- BCP53/16
- BCP53/10
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- BCP52/16
- BCP52/10
- BCP52
- BCP51/16
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- BCP51
BCP68数据表相关新闻
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DdatasheetPDF页码索引
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