Low power NPN Transistor

SMALL SIGNAL NPN TRANSISTORS ■ SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS ■ SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS ■ TAPE AND REEL PACKING ■ THE PNP COMPLEMENTARY TYPES ARE BCP52-16 AND BCP53-16 RESPECTIVELY APPLICATIONS ■ MEDIUM VOLTAGE LOAD SWITCH TRANSISTORS ■

NPN, 80V, 1A, SOT223

80V NPN MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(SAT)

NPN MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

NPN MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

80V NPN MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(SAT)

NPN MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V & 80V • IC = 1A Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

80V NPN MEDIUM POWER TRANSISTOR

Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. Features • BVCEO > 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(SAT)

80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features  BVCEO > 80V  IC = 1A High Continuous Collector Current  ICM = 2A Peak Pulse Current  2W Power Dissipation  Low Saturation Voltage VCE(SAT)

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features • BVCEO > 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(SAT)

80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features • BVCEO > 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(SAT)

80V NPN MEDIUM POWER TRANSISTOR IN SOT223

Features • BVCEO > 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(SAT)

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS NPN 80V 1A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

双极晶体管 - 双极结型晶体管(BJT) AF TRANSISTORS

transistor-bjt-master-table

80V NPN MEDIUM POWER TRANSISTOR IN SOT223

文件：457.87 Kbytes Page：7 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

2-FUNCTION, 4-DIGIT LCD AUTOMOTIVE CLOCK-PROGRAMMABLE

FEATURES ■ Digital Tuning of Crystal Frequency ■ PROM for Storing Frequency Correction Information ■ 12 or 24 Hour Timekeeping Option ■ Flashing Colon ■ Two Switches Control All Setting Functions ■ High Noise Immunity ■ Internal Power-Up Reset Circuitry ■ Internal Voltage Regulation

High Current Chokes

文件：428.21 Kbytes Page：1 Pages

Ultra-Low Power Audio CODEC for Mobile Devices

文件：1.55994 Mbytes Page：104 Pages

Ultra-Low Power Audio CODEC for Mobile Devices

文件：1.55994 Mbytes Page：104 Pages

Ultra-Low Power Audio CODEC for Mobile Devices

文件：1.55994 Mbytes Page：104 Pages