80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability

80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

80 V, 1 A NPN medium power transistors

80 V, 1 A NPN medium power transistors

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NPN Silicon Epitaxial Transistor

These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features • Pb−Free Package is Available • High Current: 1.0 Amp • The SOT-223 package c

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

NPN Silicon Epitaxial Transistor

NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

双极晶体管 - 双极结型晶体管(BJT) SS SOT223 GP XSTR NP

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 80V 1A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

80 V, 1 A NPN medium power transistors

80 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • AEC-Q101 qual

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Exposed heatsink for excellent thermal and electrical conductivity • Leadless very small SMD plastic package with medium power capability • Qualified acc

45V/60V/80V, 1A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Three current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical cond

45V/60V/80V, 1A NPN medium power transistors

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