丝印代码：BCP55；60 V, 1 A NPN medium power transistors

Features and benefits • High current • Three current gain selections • High power dissipation capability

丝印代码：BCP55；60 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BCP55；60 V, 1 A NPN medium power transistors

Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

Plastic-Encapsulate Transistors

FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51...BCP53 (PNP)

TRANSISTOR (NPN)

FEATURES e For AF driver and output stages e High collector current e Low collector-emitter saturation voltage eo Complementary types: BCP51 ... BCP53 (PNP)

60 V, 1 A NPN medium power transistor

NPN medium power transistor in a SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BCP52. • High current\n• Three current gain selections\n• High power dissipation capability\n• AEC-Q101 qualified;

60 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

MEDIUM POWER AMPLIFIER

MEDIUM POWER AMPLIFIER ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE ■

SOT-223 Plastic-Encapsulate Transistors

FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51 ... BCP53 (PNP)

SOT-223 Plastic-Encapsulate Transistors

FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51 ... BCP53 (PNP)

TRANSISTOR (NPN)

FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

High Collector Current

Features High collector current 1.3 W power dissipation.

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.0 A. Sourced from Process 38. See BCP54 for characteristics.

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Switching.

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51...BCP53 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Medium Power DC Applications Complementary BCP51 BCP52 and BCP53

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 1.3 W • Plastic case SOT-223 • Weight approx. 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

60 V, 1 A NPN medium power transistors

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

NPN Medium Power Transistor

■ Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary to BCP51,BCP52,BCP53

1A , 60V NPN Silicon Medium Power Transistor

FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage

NPN Transistors

文件：945.09 Kbytes Page：3 Pages

For AF driver and output stages

文件：1.00096 Mbytes Page：4 Pages

Surface Mount General Purpose Si-Epi-Planar Transistors

文件：108.22 Kbytes Page：2 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 1.5A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon AF Transistors

文件：530.52 Kbytes Page：7 Pages

General Purpose Transistor

NPN, 60V, 1A, SOT223

For AF driver and output stages

文件：533.22 Kbytes Page：5 Pages

丝印代码：BCP55/10；60 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BCP55/10；60 V, 1 A NPN medium power transistors

Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

丝印代码：BCP55/16；60 V, 1 A NPN medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BCP55-16；NPN Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

丝印代码：BCP55/16；60 V, 1 A NPN medium power transistors

Features and benefits • High current • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

丝印代码：BCP55T；60 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

丝印代码：BCP55-16；NPN Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

60 V, 1 A NPN medium power transistors

Features and benefits • High current • Three current gain selections • High power dissipation capability

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Switching.

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

60 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

丝印代码：P5510T；60 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Switching.

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

1A , 60V NPN Silicon Medium Power Transistor

FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51 ... BCP53 (PNP)

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51...BCP53 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

NPN Silicon Medium Power Transistor

FEATURES • For AF Driver and Output Stages • High Collector Current • Low Collector-Emitter Saturation Voltage

60 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

丝印代码：P5516T；60 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > 45V, 60V & 80V • IC = 1A High Continuous Collector Current • ICM = 2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

Planar Transistor

Features Designed for gereral prupose application requiring high breakdown voltage.

NPN Silicon Medium Power Transistor

FEATURES • For AF Driver and Output Stages • High Collector Current • Low Collector-Emitter Saturation Voltage

NPN Silicon AF Transistors

NPN Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP51...BCP53 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

•For AF driver and output stages •High collector current •Low collector-emitter saturation voltage •Complementary types: BCP 51M...BCP 53M(PNP)