Planar Transistor

Features Designed for gereral prupose application requiring high breakdown voltage.

Medium Power Transistor

Planar Transistor

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1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE

DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • Small dark current ID = 5 nA • Small terminal capaci

1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N