80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability

80 V, 1 A PNP medium power transistors

文件：274.63 Kbytes Page：14 Pages

80 V, 1 A PNP medium power transistors

80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • High Current: 1.5 Amps • NPN Complement is BCP56 • The SOT-223 Package can be soldered using wa

MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • High Current: 1.5 Amps • NPN Complement is BCP56 • The SOT-223 Package can be soldered using wa

PNP Silicon Epitaxial Transistors

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current • NPN Complement is BCP56 • The SOT−223 Package can be soldered using wave or refl

PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current • NPN Complement is BCP56 • The SOT−223 Package can be soldered using wave or refl

PNP Silicon Epitaxial Transistors

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current • NPN Complement is BCP56 • The SOT−223 Package can be soldered using wave or refl

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

80 V, 1 A NPN medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according to AEC-Q101 and recommended for use in automotive applications

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes Page：234 Pages

Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes Page：234 Pages

MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

PNP Silicon Epitaxial Transistors

文件：76.89 Kbytes Page：5 Pages

PNP Silicon Epitaxial Transistors

文件：85.96 Kbytes Page：5 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 80V 1A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：BCP53T/SOT223/SC-73 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

80 V, 1 A PNP medium power transistors

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes Page：234 Pages

Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes Page：234 Pages