丝印代码：BCP53；80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BCP53；PNP Medium Power Transistors

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80 V, 1 A PNP medium power transistors

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 BCP56 (NPN)

PNP Medium Power Transistors

■ Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary to BCP54,BCP55,BCP56

PNP Silicon Medium Power Transistor

FEATURES ● Collector-Emitter Voltage:VCEO= -80V ● Complementary types: BCP56 (NPN)

PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN)

PNP Transistors

Features ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary to BCP54,BCP55,BCP56

SOT-223 Plastic-Encapsulate Transistors

FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54 BCP56 (NPN)

SOT-223 Plastic-Encapsulate Transistors

FEATURES For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54 BCP56 (NPN)

TRANSISTOR (PNP)

FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 BCP56 (NPN)

High Collector Current

Features • High collector current • 1.3 W power dissipation.

MEDIUM POWER AMPLIFIER

MEDIUM POWER AMPLIFIER ■ SILICON EPITAXIAL PLANAR PNP TRANSISTORS ■ MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS ■ GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE ■

Plastic-Encapsulate Transistors

FEATURES • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 BCP56 (NPN)

PNP 80 V 双极晶体管

This PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-223, which is designed for low power surface mount applications. • High Current: 1.5 Amps\n• NPN Complement is BCP56\n• The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die\n• Available in 12 mm Tape and Reel Use BCP53T1G to order the 7 inch/1000 unit re;

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat)

PNP General Purpose Amplifier

Description This device is designed for general-purpose mediumpower amplifiers and switching circuits for collector currents to 1.0 A. Sourced from process 79.

PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT

This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current • NPN Complement is BCP56 • The SOT−223 Package can be soldered using wave or refl

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Medium power (max. 1.3 W). APPLICATIONS • Audio, telephony and automotive applications • Thick and thin-film circuits

PNP Silicon AF Transistors

PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54 BCP56 (NPN)

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

General Purpose Medium Power DC Applications Complementary BCP54 BCP55 and BCP56

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223

Features • BVCEO > -45V, -60V & -80V • IC = -1A High Continuous Collector Current • ICM = -2A Peak Pulse Current • 2W Power Dissipation • Low Saturation Voltage VCE(sat)

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 1.3 W • Plastic case SOT-223 • Weight approx. 0.04 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Silicon Planar Epitaxial Transistor

PNP Silicon Planar Epitaxial Transistor P/b Lead(Pb)-Free

80 V, 1 A PNP medium power transistors

80 V, 1 A PNP medium power transistors

80 V, 1 A PNP medium power transistors

Surface Mount General Purpose Si-Epi-Planar Transistors

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PNP General-Purpose Amplifier

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PNP Silicon Epitaxial Transistors

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PNP Silicon Epitaxial Transistors

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PNP, 80V, 1A, SOT223

TRANSISTOR (PNP)

文件：374.8 Kbytes Page：3 Pages

晶体管

封装/外壳：TO-261-4，TO-261AA 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 80V 1.2A SOT223-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Transistors

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SOT-223 PIastic-Encapsulate Transistors

文件：1.66704 Mbytes Page：4 Pages

丝印代码：BCP53/10；80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BCP53-16；PNP Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

丝印代码：BCP53/16；80 V, 1 A PNP medium power transistors

Features and benefits  High current  Three current gain selections  High power dissipation capability  Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  Leadless very small SMD plastic package with medium power capability (SOT1061)  AEC-Q101 qualified

丝印代码：BCP5316；80V PNP MEDIUM POWER TRANSISTOR IN SOT223

Features BVCEO > -80V IC = -1A High Continuous Collector Current ICM = -2A Peak Pulse Current 2W Power Dissipation Low Saturation Voltage VCE(sat)

丝印代码：BCP53H；80 V, 1 A PNP medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

丝印代码：BCP53H；80 V, 1 A PNP medium power transistors

General description PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High collector current capability IC and ICM ■ Three current gain selections ■ High power dissipation capability ■ High-temperature applicat

丝印代码：BCP53H；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • High-temperature applications

丝印代码：BCP53T；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified

丝印代码：BCP53-16；PNP Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

丝印代码：BCP53T；80 V, 1 A PNP medium power transistors

文件：274.63 Kbytes Page：14 Pages

PNP Silicon AF Transistors (For AF driver and output stages High collector current)

PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP 54 … BCP 56 (NPN)

PNP Plastic-Encapsulate Transistors

Features • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP54 BCP56 (NPN) • Lead Free Finish/Rohs Compliant (PSuffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability

PNP medium power transistors

DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V) • Medium power (max. 1.3 W). APPLICATIONS • Audio, telephony and automotive applications • Thick and thin-film circuits

80 V, 1 A PNP medium power transistors

PNP Silicon AF Transistors

PNP Silicon AF Transistors ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BCP54 BCP56 (NPN)

PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Suitable for AF drivers and output stages * High collector current and Low VCE(sat)

General Purpose Transistor Medium Power, PNP 80V, 1A

Specification Features • Wettable Flank Package for Optimal Automated Optical Inspection (AOI) • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are

80 V, 1 A NPN medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

丝印代码：P5310H；80 V, 1 A PNP medium power transistors

Features and benefits  High collector current capability IC and ICM  Three current gain selections  High power dissipation capability  High-temperature applications up to 175 C  AEC-Q101 qualified

丝印代码：P5310H；80 V, 1 A PNP medium power transistors

General description PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High collector current capability IC and ICM ■ Three current gain selections ■ High power dissipation capability ■ High-temperature applicat

丝印代码：P5310H；80 V, 1 A PNP medium power transistors

1. General description PNP medium power transistors in a SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • High-temperature applications

丝印代码：3N；General Purpose Transistor Medium Power, PNP 80V, 1A

Specification Features • Wettable Flank Package for Optimal Automated Optical Inspection (AOI) • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are

丝印代码：P5310T；80 V, 1 A PNP medium power transistors

Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • AEC-Q101 qualified