丝印代码：7A；45 V, 100 mA NPN/NPN matched double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard double transistors • No mutual interference between the transistors • High-temperature applications up to 1

45 V, 100 mA PNP/PNP matched double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard double transistors • No mutual interference between the transistors • High-temperature applications up to 1

45 V, 100 mA NPN/NPN matched double transistor

NPN/NPN matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n PNP/PNP complement: BCM857BSH • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Current gain matching\n• Base-emitter voltage matching\n• Drop-in replacement for standard double transistors\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C;

45 V, 100 mA NPN/NPN matched double transistor

NPN/NPN matched double transistor in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.\n PNP/PNP complement: BCM857BSH-Q • Low collector capacitance\n• Low collector-emitter saturation voltage\n• Current gain matching\n• Base-emitter voltage matching\n• Drop-in replacement for standard double transistors\n• No mutual interference between the transistors\n• High-temperature applications up to 175 °C\n• Qualified accord;

丝印代码：7A；45 V, 100 mA NPN/NPN matched double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard double transistors • No mutual interference between the transistors • High-temperature applications up to 1

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN general purpose transistors

DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

RF POWER TRANSISTOR NPN SILICON

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