丝印代码：3Fs；PNP Silicon AF Transistors

• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846W, BC847W, BC848W, BC849W, BC850W (NPN)

丝印代码：3Fs；PNP Silicon AF Transistor

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847...-BC850... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

PNP SILICON PLANAR EPITAXIAL TRANSISTORS General Purpose Switching and Amplification.

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary NPN Types Available (BC846AW – BC848CW) • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Ideally Suited for Automated Insertion • Complementary NPN Types Available (BC846W-BC848W) • For Switching and AF Amplifier Applications • Lead Free/RoHS Compliant (Note 3) • Green Device (Note 4 and 5)

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

SMD General Purpose PNP Transistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP General Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Ideally Suited for Automatic Insertion • Complementary PNP Silicon Types Available • For Switching and AF Amplifier Applications • Epoxy meets UL 94 V-0 flammability rating • Moisure S

General Purpose Transistor PNP Silicon

General Purpose Transistor PNP Silicon Pb Lead(Pb)-Free

丝印代码：3F-；PNP general purpose transistors

PNP General Purpose Transistor

■ Features ● Ideally suited for automatic insertion ● For Switching and AF Amplifier Applications

BC856AW

FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications * Operating Temp. : -55°C ~ +150°C

PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

Features ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC 847W, BC 848W, BC 849W, BC 850W (NPN)

丝印代码：3F；Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • Ideally suited for automatic insertion • For Switching and AF Amplifier Applications

45 V, 100 mA NPN general-purpose transistors

Features and benefits • General-purpose transistors • SMD plastic packages • Three different gain selections

丝印代码：3F；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 65 V).

丝印代码：3Ft；For Switching and AF Amplifier Applications

FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications

封装/外壳：SC-70，SOT-323 包装：散装 描述：TRANS PNP 45V 0.1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP, 45V, 0.1A, SOT323

丝印代码：3F；PNP Silicon Epitaxial Planar Transistor

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丝印代码：3F-；PNP general purpose transistors

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

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PNP General Purpose Transistors

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Surface Mount General Purpose Si-Epi-Planar Transistors

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PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

文件：367.19 Kbytes Page：3 Pages

SURFACE MOUNT PNP SILICON TRANSISTOR

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丝印代码：3Fs；PNP Silicon AF Transistor

文件：887.44 Kbytes Page：14 Pages

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features • Ideally Suited for Automatic Insertion • Complementary NPN Types Available (BC846AW – BC848CW) • For switching and AF Amplifier Applications • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. Green Device (Note 3) • Qualified to AEC-Q101

Small Signal Transistor

Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage VCBO: BC856W= -80V BC857W= -50V BC858W= -30V -Operating and

General Purpose Transistor

Features - Ideally suited for automatic insertion. - For switching and AF amplifier applications.

PNP SMALL SIGNAL TRANSISTOR IN SOT323

Features • BVCEO > -45V • IC = -100mA Collector Current • Low Saturation Voltage VCE(sat)

丝印代码：3F；65 V, 100 mA PNP general-purpose transistors

1. General description PNP general-purpose transistors in a very small SOT323 (SC-70), Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia JEDEC NPN complement BC856W-Q BC846W-Q BC856AW-Q BC846AW-Q BC856BW-Q BC846BW-Q BC857W-Q BC847W-Q BC

45 V, 100 mA NPN general-purpose transistors

Features and benefits • General-purpose transistors • SMD plastic packages • Three different gain selections • Qualified according to AEC-Q101 and recommended for use in automotive applications

丝印代码：K3B；PNP SMALL SIGNAL TRANSISTOR IN SOT323

Features • BVCEO > -45V • IC = -100mA Collector Current • Low Saturation Voltage VCE(sat)

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

General Purpose Transistors(PNP Silicon)

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

CASE 419-02, STYLE 3 SOT-323/SC-70

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is designed for low power surface mount applications. Features • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 0.1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP general purpose transistors

PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR

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丝印代码：3F；PNP Silicon Epitaxial Planar Transistor

文件：1.06616 Mbytes Page：5 Pages

Transistors

PNP, 45V, 0.1A, SOT323

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of