PNPSiliconAFTransistors(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC847W,BC848W,BC849W,BC850W(NPN)

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryNPNTypesAvailable(BC846AW–BC848CW) •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

PNPSiliconAFTransistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistor PNPSilicon PbLead(Pb)-Free

PNPGeneralPurposeTransistor

■Features ●Ideallysuitedforautomaticinsertion ●ForSwitchingandAFAmplifierApplications

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •IdeallySuitedforAutomatedInsertion •ComplementaryNPNTypesAvailable(BC846W-BC848W) •ForSwitchingandAFAmplifierApplications •LeadFree/RoHSCompliant(Note3) •GreenDevice(Note4and5)

BC856AW

FEATURES *Ideallysuitedforautomaticinsertion *ForSwitchingandAFAmplifierApplications *OperatingTemp.:-55°C~+150°C

PNPGeneralPurposeTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •IdeallySuitedforAutomaticInsertion •ComplementaryPNPSiliconTypesAvailable •ForSwitchingandAFAmplifierApplications •EpoxymeetsUL94V-0flammabilityrating •MoisureS

PNPgeneralpurposetransistors

PNPSILICONPLANAREPITAXIALTRANSISTORS

PNPSILICONPLANAREPITAXIALTRANSISTORS GeneralPurposeSwitchingandAmplification.

Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES •Ideallysuitedforautomaticinsertion •ForSwitchingandAFAmplifierApplications

PNPSiliconAFTransistor

PNPSiliconAFTransistor •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30hzand15kHz •Complementarytypes: BC847...-BC850...(NPN) •Pb-free(RoHScompliant)package •QualifiedaccordingAECQ1011)

SMDGeneralPurposePNPTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

45V,100mANPNgeneral-purposetransistors

Featuresandbenefits •General-purposetransistors •SMDplasticpackages •Threedifferentgainselections

PNPgeneralpurposetransistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.65V).

ForSwitchingandAFAmplifierApplications

FEATURES *Ideallysuitedforautomaticinsertion *ForSwitchingandAFAmplifierApplications

封装/外壳：SC-70，SOT-323 包装：散装 描述：TRANS PNP 45V 0.1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNPGeneralPurposeTransistors

文件：586.99 Kbytes Page：3 Pages

PNPSiliconEpitaxialPlanarTransistor

文件：1.06616 Mbytes Page：5 Pages

PNPgeneralpurposetransistors

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

文件：196.29 Kbytes Page：2 Pages

SURFACEMOUNTPNPSILICONTRANSISTOR

文件：407.38 Kbytes Page：2 Pages

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

文件：98.64 Kbytes Page：2 Pages

PNPSiliconAFTransistor

文件：887.44 Kbytes Page：14 Pages

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

文件：367.19 Kbytes Page：3 Pages

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •ComplementaryNPNTypesAvailable(BC846AW–BC848CW) •ForswitchingandAFAmplifierApplications •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.GreenDevice(Note3) •QualifiedtoAEC-Q101

SmallSignalTransistor

Features -Ideallysuitedforautomaticinsertion -ForSwitchingandAFAmplifierApplications -Powerdissipation PCM:0.15W(@TA=25°C) -Collectorcurrent ICM:-0.1A -Collector-basevoltage VCBO:BC856W=-80V BC857W=-50V BC858W=-30V -Operatingand

PNPSMALLSIGNALTRANSISTORINSOT323

Features •BVCEO>-45V •IC=-100mACollectorCurrent •LowSaturationVoltageVCE(sat)

65V,100mAPNPgeneral-purposetransistors

1.Generaldescription PNPgeneral-purposetransistorsinaverysmallSOT323(SC-70),Surface-MountedDevice(SMD) plasticpackage. Table1.Productoverview TypenumberPackage NexperiaJEDEC NPNcomplement BC856W-QBC846W-Q BC856AW-QBC846AW-Q BC856BW-QBC846BW-Q BC857W-QBC847W-Q BC

45V,100mANPNgeneral-purposetransistors

Featuresandbenefits •General-purposetransistors •SMDplasticpackages •Threedifferentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

PNPSMALLSIGNALTRANSISTORINSOT323

Features •BVCEO>-45V •IC=-100mACollectorCurrent •LowSaturationVoltageVCE(sat)

GeneralPurposeTransistors(PNPSilicon)

GeneralPurposeTransistorsPNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–323/SC–70whichisdesignedforlowpowersurfacemountapplications.

CASE419-02,STYLE3SOT-323/SC-70

GeneralPurposeTransistorsPNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–323/SC–70whichisdesignedforlowpowersurfacemountapplications.

GeneralPurposeTransistors(PNPSilicon)

GeneralPurposeTransistors PNPSilicon Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–323/SC–70whichisdesignedforlowpowersurfacemountapplications.

GeneralPurposeTransistors

Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSC−70/SOT−323whichisdesignedforlowpowersurfacemountapplications. Features •SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 45V 0.1A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNPgeneralpurposetransistors

PNPSURFACEMOUNTSMALLSIGNALTRANSISTOR

文件：367.19 Kbytes Page：3 Pages

PNPSiliconEpitaxialPlanarTransistor

文件：1.06616 Mbytes Page：5 Pages

857SeriesHighTempCardEdgeConnector|Black|0.156(3.96mm)Pitch|0.200(5.08mm)RowSpacing|LowProfileInsulator

Features 0.156(3.96mm)ContactSpacingby0.200(5.08mm)RowSpacing Accepts.062(1.57mm)NominalThicknessP.C.Board LowProfileInsulatorBody,0.473(12.01mm) ContactTerminationOptionsincludeP.C.Tail,WireHole,WireWrap,90andExtenderBoardBends SingleorDualRowConfiguratio

boxesandancillaryproducts

文件：3.51246 Mbytes Page：5 Pages

PNPSMALLSIGNALTRANSISTORINSOT23

文件：433.82 Kbytes Page：7 Pages

45VDUALPNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

文件：316.02 Kbytes Page：5 Pages

45VPNPSMALLSIGNALTRANSISTOR

文件：337.98 Kbytes Page：5 Pages