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型号 功能描述 生产厂家 企业 LOGO 操作
BC857BWQ

PNP SMALL SIGNAL TRANSISTOR IN SOT323

Features • BVCEO > -45V • IC = -100mA Collector Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

BC857BWQ

PNP, 45V, 0.1A, SOT323

DIODES

美台半导体

丝印代码:K3B;PNP SMALL SIGNAL TRANSISTOR IN SOT323

Features • BVCEO > -45V • IC = -100mA Collector Current • Low Saturation Voltage VCE(sat)

DIODES

美台半导体

封装/外壳:SC-70,SOT-323 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 120V 0.05A UMT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

DIODES

美台半导体

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

PHILIPS

飞利浦

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

MOTOROLA

摩托罗拉

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

NTE

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

NTE

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

NTE

BC857BWQ产品属性

  • 类型

    描述

  • Compliance(Only Automotive supports PPAP):

    Automotive

  • Polarity:

    PNP

  • IC (A):

    0.1

  • ICM (A):

    0.2

  • PD (W):

    0.2

  • hFE (Min):

    220

  • hFE (@ IC) (A):

    0.002

  • VCE(sat) Max (mV):

    300

  • VCE(SAT) (@ IC/IB) (A/mA):

    0.01/0.5

  • VCE(sat) (Max.2) (mV):

    650

  • VCE(sat) (@ IC/IB2) (A/mA):

    0.1/5

  • fT (MHz):

    200

  • Packages:

    SOT323

更新时间:2026-5-18 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES INCORPORATED
25+
N/A
6843
样件支持,可原厂排单订货!
DIODES INCORPORATED
25+
N/A
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
ST
20+
SOT-23
15800
原装优势主营型号-可开原型号增税票
NEXPERIA/安世
22+
SOT-23
20000
只做原装
NEXPERIA/安世
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
ST
25+
SOT-23
20000
原装,请咨询
ST
26+
SOT-23
60000
只有原装 可配单
NEXPERIA/安世
23+
SOT-23
330000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
Nexperia(安世)
2447
SOT-23
115000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
ST
25+
SOT-23
20000
原装

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