NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)

NPN Silicon AF Transistors Features ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC 856, BC 857, BC 859, BC 860 (PNP)

Surface mount Si-Epitaxial PlanarTransistors

General Purpose Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN Silicon AF Transistors

• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856...-BC860...(PNP) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

General Purpose Transistors

General Purpose Transistors NPN Silicon

General Purpose Transistor NPN Silicon

General Purpose Transistor NPN Silicon * Moisture Sensitivity Level: 1 * ESD Rating - Human Body Model:>4000V - Machine Model:>400V

NPN GENERAL PURPOSE TRANSISTORS

FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Pb free product are available : 99 Sn above can meet Rohs environment substance directive request

NPN General Purpose Transistors

■ Features ● Low current (max. 100 mA) ● Low voltage (max. 45 V). ● PNP complements: BC859 and BC860.

NPN general purpose transistors

NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC859 and BC860. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

General Purpose Transistors

General Purpose Transistors NPN Silicon

SMD NPN Transistor

General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V,Machine Model: >400 V • Epitaxial plana chip construction • Ideal for medium power application and switching • As complementary type, the PNP transistor

NPN general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V). APPLICATIONS •General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC859 and BC860.

NPN general purpose transistors

NPN Transistors

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SMD General Purpose NPN Transistors

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NPN Transistors

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NPN Silicon AF Transistors

文件：183.85 Kbytes Page：19 Pages

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon

CASE 318-08, STYLE 6 SOT-23 (TO-236AB)

General Purpose Transistors NPN Silicon

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

General Purpose Transistors

General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q

General Purpose Transistors

General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: > 4000 V ESD Rating − Machine Model: > 400 V • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Q

NPN Epitaxial Silicon Transistor

Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 ... BC860

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC856T, BC857T, BC858T, BC859T, BC860T

NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complements: BC859W and BC860W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For AF input stages and driver applications ● High current gain ● Low collector-emitter saturation voltage ● Low noise between 30 Hz and 15 kHz ● Complementary types: BC856W, BC857W, BC858W, BC859W, BC860W (PNP)

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 200 mW • Plastic case SOT-323 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

NPN Transistor

FEATURES - Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix G means green compound (halogen-free)

NPN GENERAL PURPOSE TRANSISTORS

FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Both normal and Pb free product are available : Normal : 80~95 Sn, 5~20 Pb Pb free: 98.5 Sn above

NPN general purpose transistors

NPN general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

NPN GENERAL PURPOSE TRANSISTORS

VOLTAGE 30/45/65 Volts POWER 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2011/65/EU directives • Gree

NPN GENERAL PURPOSE TRANSISTORS

VOLTAGE 30/45/65 Volts POWER 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2011/65/EU directives • Gree

NPN GENERAL PURPOSE TRANSISTORS

VOLTAGE 30/45/65 Volts POWER 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2011/65/EU directives • Gree

NPN GENERAL PURPOSE TRANSISTORS

VOLTAGE 30/45/65 Volts POWER 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2011/65/EU directives • Gree

NPN GENERAL PURPOSE TRANSISTORS

VOLTAGE 30/45/65 Volts POWER 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2011/65/EU directives • Gree

NPN GENERAL PURPOSE TRANSISTORS

VOLTAGE 30/45/65 Volts POWER 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2011/65/EU directives • Gree

NPN GENERAL PURPOSE TRANSISTORS

VOLTAGE 30/45/65 Volts POWER 250 mWatts FEATURES • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Acqire quality system certificate : TS16949 • AEC-Q101 qualified • Lead free in comply with EU RoHS 2011/65/EU directives • Gree

SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS

SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS

SOT23 NPN SILICON PLANAR

SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 45V 0.1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 45V 0.1A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN general purpose transistors

General Purpose Transistors

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General Purpose Transistors

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NPN Epitaxial Silicon Transistor

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NPN Silicon Epitaxial Planar Transistor

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NPN Silicon AF Transistors

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NPN Transistor

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NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

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Panel Mount, Shocksafe 5x20mm Fuses

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Polyester Film Tape

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INTERCONNECTS .050??Grid Headers and Sockets Single and Double Row

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Cartridge Fuse Holders Enclosed Fuseholders > Panel/Circuit Board Mounted

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Premier Supplier of Electronic Hardware

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