NPNNPN Plastic-Encapsulate Transistors

Features High current gain Excellent hre linearity Low noise

NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)

NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package

NPN Silicon AF Transistor Array

NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see package info

Surface mount Si-Epitaxial PlanarTransistors

Features Two transistors in one package General Purpose Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade 1) Mechanical Data 1) Taped and reeled 3000 / 7“ Weight approx. 0.01 g Case

NPN Multi-Chip General Purpose Amplifier

NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 07.

Multi-Chip Transistor

Features Power dissipation PCM : 0.3 W (Tamp.= 25°C) Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 50 V Operating & Storage junction Temperature Tj, Tstg : -55°C~ +150°C

Multi-chip transistor (NPN)

Multi-chip transistor (NPN) APPLICATION This device is designed for general purpose amplifier applications

NPN Silicon AF Transistor Arrays

NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see package info

NPN Multi-Chip General Purpose Amplifier

Features ● High current gain ● Low collector-emitter saturation voltage

Dual General Purpose Transistor

Dual General Purpose Transistor NPN Silicon P/b Lead(Pb)-Free

Dual NPN Small Signal Surface Mount Transistor

FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● Dual NPN small signal surface mount transistor.

DUAL TRANSISTOR (NPNNPN)

DUAL TRANSISTOR (NPN+NPN) APPLICATION This device is designed for general purpose amplifier applications

丝印代码：1C；Dual NPN Small Signal Surface Mount Transistor

FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● Dual NPN small signal surface mount transistor.

丝印代码：1C；SOT-363 Plastic-=Encapsulate Transistors

APPLICATION This device is designed for general purpose amplifier applications

丝印代码：1C；Plastic-Encapsulate Transistors

Features  This device is designed for general purpose amplifier applications  High Stability and High Reliability

Multi-Chip TRANSISTOR (NPN)

FEATURES Power dissipation PCM : 300 mW (Tamb=25℃) Collector current ICM : 200 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range TJ,Tstg: -55℃to +150℃

AF 通用晶体管

NPN 硅 AF 晶体管阵列 • 高电流增益\n• 两个（电流）内部隔离的晶体管，在一个封装中具有良好的匹配性\n• 无铅（符合 RoHS 标准）封装\n• 符合 AEC Q101 要求;

SMD General Purpose NPN Transistors

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NPN Silicon AF Transistor Arrays

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SMD General Purpose NPN Transistors

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SMD General Purpose NPN Transistors

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SMD General Purpose Dual NPN Transistors

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Surface Mount General Purpose Si-Epi-Planar Double-Transistors

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丝印代码：1E；General Purpose Transistors

General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V

丝印代码：1F；General Purpose Transistors

General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V

丝印代码：1G；General Purpose Transistors

General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V

200mW, Dual NPN Small Signal Transistor

FEATURES AEC-Q101 qualified General-purpose transistors Ideal for automated placement Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS General switching and amplification

NPN Silicon

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NPN Multi-Chip TRANSISTOR

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Bipolar Transistors

TRANSISTOR:Genreal Purpuse

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN general purpose transistors

DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

RF POWER TRANSISTOR NPN SILICON

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