丝印代码：001101；45 V, 100 mA NPN general-purpose transistors

Features and benefits  General-purpose transistors  Three current gain selections  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of solder joint  AEC-Q101 qualified

45 V, 100 mA PNP general-purpose transistors

Features and benefits  General-purpose transistors  Three current gain selections  Low package height of 0.37 mm  Suitable for Automatic Optical Inspection (AOI) of solder joint  AEC-Q101 qualified

45 V, 100 mA NPN general-purpose transistors

NPN general-purpose transistors in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and soldarable side pads.\nTable 1. Product overview Type Number\n Package\n PNP complement\n Nexperia\n JEITA\n JEDEC\n BC847AQA\n DFN1010 • General-purpose transistors\n• Low package height of 0.37 mm\n• AEC-Q101 qualified\n;

丝印代码：001101；45 V, 100 mA NPN general-purpose transistors

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封装/外壳：3-XDFN 裸露焊盘 包装：散装 描述：TRANS NPN 45V 0.1A DFN1010D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

NPN general purpose transistors

DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

RF POWER TRANSISTOR NPN SILICON

文件：101.01 Kbytes Page：4 Pages