BC847CD价格
参考价格:¥0.4792
型号:BC847CDLP-7 品牌:Diodes 备注:这里有BC847CD多少钱,2026年最近7天走势,今日出价,今日竞价,BC847CD批发/采购报价,BC847CD行情走势销售排行榜,BC847CD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BC847CD | NPN/NPN Matched Double Transistors Features • Low Collector Emitter Saturation Voltage • Halogen and Antimony Free(HAF), RoHS compliant Applications • General purpose and switching applications | HUIXIN 慧芯电子 | ||
BC847CD | TRANSISTOR | AITSEMI 创瑞科技 | ||
NPN DUAL SURFACE MOUNT TRANSISTOR Features • BVCEO > 45V • Low profile 0.4mm high package for thin applications • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability | DIODES 美台半导体 | |||
NPN DUAL SURFACE MOUNT TRANSISTOR Features • BVCEO > 45V • Low profile 0.4mm high package for thin applications • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability | DIODES 美台半导体 | |||
丝印代码:1GT;Plastic-Encapsulate Transistors FEATURES Two transistors in one package Reduces number of components and board space No mutual interference between the transistors | GWSEMI 唯圣电子 | |||
Dual General Purpose Transistors Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. | YEASHIN 亚昕科技 | |||
100 mA, 45 V Dual NPN Bipolar Junction Transistors These 100 mA, 45 V Dual NPN Bipolar Junction Transistors are designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88, which is designed for low power surface mount applications. • 2 devices in 1 SOT-363/SC-88 Package\n• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable\n; | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. | ETL 亚历电子 | |||
Dual General Purpose Transistors Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S and NSV Prefixes for Automotive and Other Applications Requiri | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. • Lead-Free Solder Plating | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications. Features • These are Pb−Free Devices | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT-563 which is designed for low power surface mount applications. • Lead-Free Solder Plating | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−563 which is designed for low power surface mount applications. Features • These are Pb−Free Devices | ONSEMI 安森美半导体 | |||
45V DUAL NPN SMALL SIGNAL TRANSISTOR 文件:204.26 Kbytes Page:6 Pages | DIODES 美台半导体 | |||
NPN小信号三极管 | STMICROELECTRONICS 意法半导体 | |||
丝印代码:1G;NPN Silicon Epitaxial General Purpose Transistors 文件:2.41026 Mbytes Page:15 Pages | FUTUREWAFER | |||
Dual General Purpose Transistors 文件:110.48 Kbytes Page:11 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors 文件:102.11 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors 文件:102.11 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors 文件:102.11 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors 文件:102.11 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors 文件:138.67 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors 文件:138.67 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors 文件:102.11 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors 文件:102.11 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors 文件:138.67 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
General Purpose Transistors(NPN Silicon) General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V | ONSEMI 安森美半导体 | |||
NPN general purpose transistors DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. | PHILIPS 飞利浦 | |||
NPN general purpose transistors DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching | PHILIPS 飞利浦 | |||
NPN general purpose transistors DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. | PHILIPS 飞利浦 | |||
RF POWER TRANSISTOR NPN SILICON 文件:101.01 Kbytes Page:4 Pages | MOTOROLA 摩托罗拉 |
BC847CD产品属性
- 类型
描述
- VCEO (V):
45
- hFE/ Min/Max:
420/800
- hFE/ IC(mA)/VCE(Volts):
2/5
- VCE(sat) / Max (Volts):
0.60
- VCE(sat) /IC/IB (mA):
100/5
- fT TYP (MHz):
>100
- Style:
E
- Package:
SC-88
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
25+ |
SOT-363 |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ON(安森美) |
23+ |
SOT-563 |
12524 |
公司只做原装正品,假一赔十 |
|||
ON |
24+ |
SOT-563 |
23000 |
全新原装现货,量大特价,原厂正规渠道! |
|||
ON |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
onsemi(安森美) |
24+ |
SOT-563 |
3727 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ONSEMI/安森美 |
25+ |
SOT-363 |
90000 |
ONSEMI/安森美全新特价BC847CDW1T1G即刻询购立享优惠#长期有货 |
|||
onsemi(安森美) |
25 |
SOT-563 |
60 |
QQ询价 绝对原装正品 |
|||
ON(安森美) |
2511 |
SOT-563 |
8790 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
BC847CD规格书下载地址
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BC847CD数据表相关新闻
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2019-3-28
DdatasheetPDF页码索引
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