BC847BPD价格
参考价格:¥0.1246
型号:BC847BPDW1T1G 品牌:ONSemi 备注:这里有BC847BPD多少钱,2026年最近7天走势,今日出价,今日竞价,BC847BPD批发/采购报价,BC847BPD行情走势销售排行榜,BC847BPD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BC847BPD | TRANSISTOR | AITSEMI 创瑞科技 | ||
GENERAL PURPOSE TRANSISTOR NPN/PNP DUAL (COMPLIMENTARY) DESCRIPTION These transistors are designed for general purpose amplifier applications. They are housed in the SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. The BC846BPDW~BC848CPDW is available in SC–88 | AITSEMI 创瑞科技 | |||
Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors(NPN/PNP Duals) These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors(NPN/PNP Duals) These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistor Dual General Purpose Transistor NPN/PNP Dual (Complementary) This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. • Lead−Free Solder Plating | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistor Dual General Purpose Transistor NPN/PNP Dual (Complementary) This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. • Lead−Free Solder Plating | ONSEMI 安森美半导体 | |||
Pb?묯ree Package is Available 文件:1.00416 Mbytes Page:9 Pages | YEASHIN 亚昕科技 | |||
Transistors | WILLAS 威伦电子 | |||
Dual General Purpose Transistors(NPN/PNP Duals) | ONSEMI 安森美半导体 | |||
NPN/PNP Dual General Purpose Transistor 文件:116.51 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
NPN/PNP Dual General Purpose Transistor 文件:116.51 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistor 文件:82.18 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistor 文件:82.18 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistor 文件:82.18 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
NPN/PNP Dual General Purpose Transistor 文件:116.51 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistor 文件:82.18 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistor 文件:82.18 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
NPN/PNP Dual General Purpose Transistor 文件:116.51 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
Dual General Purpose Transistor 文件:82.18 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
General Purpose Transistors(NPN Silicon) General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V | ONSEMI 安森美半导体 | |||
NPN general purpose transistors DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. | PHILIPS 飞利浦 | |||
NPN general purpose transistors DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching | PHILIPS 飞利浦 | |||
NPN general purpose transistors DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. | PHILIPS 飞利浦 | |||
RF POWER TRANSISTOR NPN SILICON 文件:101.01 Kbytes Page:4 Pages | MOTOROLA 摩托罗拉 |
BC847BPD产品属性
- 类型
描述
- VCEO (V):
45
- hFE/ Min/Max:
20/475
- hFE/ IC(mA)/VCE(Volts):
2/5
- VCE(sat) / Max (Volts):
0.60
- VCE(sat) /IC/IB (mA):
100/5
- fT TYP (MHz):
100
- Style:
G
- Package:
SC-88
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
25+ |
SOT-363 |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ON SEMI |
24+ |
Tube |
75000 |
郑重承诺只做原装进口现货 |
|||
25+ |
10 |
公司现货库存 |
|||||
ON |
24+ |
SOT-563 |
23000 |
全新原装现货,量大特价,原厂正规渠道! |
|||
ON/安森美 |
25+ |
SOT-363 |
30000 |
全新原装现货,假一赔十. |
|||
ON/安森美 |
20+ |
SOT-363 |
120000 |
原装正品 可含税交易 |
|||
ON/安森美 |
19+ |
NA |
54000 |
||||
onsemi(安森美) |
24+ |
SOT-563 |
3727 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON(安森美) |
23+ |
25900 |
新到现货,只有原装 |
||||
ON/安森美 |
2021+ |
NA |
9000 |
原装现货,随时欢迎询价 |
BC847BPD芯片相关品牌
BC847BPD规格书下载地址
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BC847BPD数据表相关新闻
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深圳市顺德利科技有限公司 0755-82725660 18128853661(微信75056055) QQ:782954141
2019-6-18
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