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BC847BPD价格

参考价格:¥0.1246

型号:BC847BPDW1T1G 品牌:ONSemi 备注:这里有BC847BPD多少钱,2026年最近7天走势,今日出价,今日竞价,BC847BPD批发/采购报价,BC847BPD行情走势销售排行榜,BC847BPD报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BC847BPD

TRANSISTOR

AITSEMI

创瑞科技

GENERAL PURPOSE TRANSISTOR NPN/PNP DUAL (COMPLIMENTARY)

DESCRIPTION These transistors are designed for general purpose amplifier applications. They are housed in the SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. The BC846BPDW~BC848CPDW is available in SC–88

AITSEMI

创瑞科技

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu

ONSEMI

安森美半导体

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu

ONSEMI

安森美半导体

Dual General Purpose Transistors(NPN/PNP Duals)

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • Pb−Free Package is Available

ONSEMI

安森美半导体

Dual General Purpose Transistors(NPN/PNP Duals)

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • Pb−Free Package is Available

ONSEMI

安森美半导体

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu

ONSEMI

安森美半导体

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu

ONSEMI

安森美半导体

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu

ONSEMI

安森美半导体

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu

ONSEMI

安森美半导体

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu

ONSEMI

安森美半导体

Dual General Purpose Transistors

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qu

ONSEMI

安森美半导体

Dual General Purpose Transistor

Dual General Purpose Transistor NPN/PNP Dual (Complementary) This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. • Lead−Free Solder Plating

ONSEMI

安森美半导体

Dual General Purpose Transistor

Dual General Purpose Transistor NPN/PNP Dual (Complementary) This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. • Lead−Free Solder Plating

ONSEMI

安森美半导体

Pb?묯ree Package is Available

文件:1.00416 Mbytes Page:9 Pages

YEASHIN

亚昕科技

Transistors

WILLAS

威伦电子

Dual General Purpose Transistors(NPN/PNP Duals)

ONSEMI

安森美半导体

NPN/PNP Dual General Purpose Transistor

文件:116.51 Kbytes Page:6 Pages

ONSEMI

安森美半导体

NPN/PNP Dual General Purpose Transistor

文件:116.51 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistor

文件:82.18 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistor

文件:82.18 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistor

文件:82.18 Kbytes Page:8 Pages

ONSEMI

安森美半导体

NPN/PNP Dual General Purpose Transistor

文件:116.51 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistor

文件:82.18 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistor

文件:82.18 Kbytes Page:8 Pages

ONSEMI

安森美半导体

NPN/PNP Dual General Purpose Transistor

文件:116.51 Kbytes Page:6 Pages

ONSEMI

安森美半导体

Dual General Purpose Transistor

文件:82.18 Kbytes Page:8 Pages

ONSEMI

安森美半导体

General Purpose Transistors(NPN Silicon)

General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V − Machine Model: >400 V

ONSEMI

安森美半导体

NPN general purpose transistors

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC856, BC857 and BC858. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

PHILIPS

飞利浦

NPN general purpose transistors

DESCRIPTION NPN transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. PNP complements: BC856F, BC857F and BC858F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

PHILIPS

飞利浦

NPN general purpose transistors

DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification.

PHILIPS

飞利浦

RF POWER TRANSISTOR NPN SILICON

文件:101.01 Kbytes Page:4 Pages

MOTOROLA

摩托罗拉

BC847BPD产品属性

  • 类型

    描述

  • VCEO (V):

    45

  • hFE/ Min/Max:

    20/475

  • hFE/ IC(mA)/VCE(Volts):

    2/5

  • VCE(sat) / Max (Volts):

    0.60

  • VCE(sat) /IC/IB (mA):

    100/5

  • fT TYP (MHz):

    100

  • Style:

    G

  • Package:

    SC-88

更新时间:2026-5-25 10:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
25+
SOT-363
18798
原装正品现货,原厂订货,可支持含税原型号开票。
ON SEMI
24+
Tube
75000
郑重承诺只做原装进口现货
25+
10
公司现货库存
ON
24+
SOT-563
23000
全新原装现货,量大特价,原厂正规渠道!
ON/安森美
25+
SOT-363
30000
全新原装现货,假一赔十.
ON/安森美
20+
SOT-363
120000
原装正品 可含税交易
ON/安森美
19+
NA
54000
onsemi(安森美)
24+
SOT-563
3727
原厂订货渠道,支持BOM配单一站式服务
ON(安森美)
23+
25900
新到现货,只有原装
ON/安森美
2021+
NA
9000
原装现货,随时欢迎询价

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