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型号 功能描述 生产厂家 企业 LOGO 操作
BC818F

NPN Silicon Transistor (High current application Switching application)

Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary pair with BC808F

AUK

BC818F

High current application

Descriptions • High current application • Switching application Features • Suitable for AF-Driver stage and low power output stages • Complementary pair with BC808F

KODENSHI

可天士

BC818F

High current application

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KODENSHI

可天士

BC818F

Small Signal Transistors

AUK

NPN general purpose transistor

DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complement: BC807W. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

PHILIPS

飞利浦

Low Cost, Low Power Video Op Amp

GENERAL DESCRIPTION The AD818 is a low cost video op amp optimized for use in video applications that require gains equal to or greater than +2 or –1. The AD818’s low differential gain and phase errors, single supply functionality, low power, and high output drive make it ideal for cable driving

AD

亚德诺

PHASE CONTROL THYRISTOR

Repetitive voltage up to 4000 V Mean on-state current 580 A Surge current 5.9 kA

POSEICO

Integrated Circuit TV Luminance Processor

Description: A single DC picture control adjusts the gain of both the low–level video and chroma amplification in color TV receivers which employ the NTE818Luminance Processor. Automatic brightness limiting (ABL) and vertical maintaining a constant black level. During the horizontal blanking inte

NTE

HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR

Description The device is manufactured in low voltage PNP Planar Technology with Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ DC current gain > 100 (h

STMICROELECTRONICS

意法半导体

BC818F产品属性

  • 类型

    描述

  • Classifacation:

    Single type

  • VCEO [V]:

    25

  • IC[mA]:

    800

  • PC[mW]:

    200

  • hFE_Min:

    100

  • hFE_Max:

    630

  • hFE@ VCE [V]:

    1

  • hFE@ IC[mA]:

    100

  • VCE(sat) [V]_Max:

    700

  • VCE(sat) [V]@ IC[mA]:

    500

  • VCE(sat) [V]@ IB[mA]:

    50

  • fT[MHz]_Typ:

    100

  • fT[MHz]@ VCE [V]:

    5

  • fT[MHz]@ IC[mA]:

    10

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