NPN general purpose transistor

DESCRIPTION NPN transistor in a SOT323 plastic package. PNP complement: BC807W. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

NPN Silicon AF Transistors

NPN Silicon AF Transistors ● For general AF applications ● High collector current ● High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC807W, BC808W (PNP)

Surface mount Si-Epitaxial PlanarTransistors

Features General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Typical Applications Signal processing, Switching, Amplification Commercial grade Suffix -Q: AEC-Q101 compliant 1) Suffix -AQ: in AEC-Q101 qualification 1) Mechanical Data 1) Taped an

NPN Silicon Epitaxial Planar Transistors

NPN Silicon Epitaxial Planar Transistors for general purpose and switching applications These transistors are subdivided into three groups –16, -25, -40 according to their current gain.

NPN Silicon AF Transistors

NPN Silicon AF Transistors● For general AF applications\n● High collector current\n● High current gain\n● Low collector-emitter saturation voltage\n● Complementary types: BC807W, BC808W (PNP)

SMD General Purpose NPN Transistors

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SMD General Purpose PNP Transistors

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Low Cost, Low Power Video Op Amp

GENERAL DESCRIPTION The AD818 is a low cost video op amp optimized for use in video applications that require gains equal to or greater than +2 or –1. The AD818’s low differential gain and phase errors, single supply functionality, low power, and high output drive make it ideal for cable driving

PHASE CONTROL THYRISTOR

Repetitive voltage up to 4000 V Mean on-state current 580 A Surge current 5.9 kA

Integrated Circuit TV Luminance Processor

Description: A single DC picture control adjusts the gain of both the low–level video and chroma amplification in color TV receivers which employ the NTE818Luminance Processor. Automatic brightness limiting (ABL) and vertical maintaining a constant black level. During the horizontal blanking inte

HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR

Description The device is manufactured in low voltage PNP Planar Technology with Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ DC current gain > 100 (h