NPN Silicon Transistor Array

NPN Silicon AF Transistor Array • For AF stages and driver applications • High current gain • Low collector-saturation voltage • Two (galvanic) internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101

General Purpose Transistors

General Purpose Transistors NPN Silicon FEATURE ● Collector current capability IC = 500 mA. ● Collector-emitter voltage VCEO(max) = 45 V. ● General purpose switching and amplification. ● PNP complement: LBC807 Series. ● Pb-Free Package is available.

NPN Silicon AF Transistor Array

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AF 通用晶体管

General Purpose Transistors

General Purpose Transistors NPN Silicon FEATURE ● Collector current capability IC = 500 mA. ● Collector-emitter voltage VCEO(max) = 45 V. ● General purpose switching and amplification. ● PNP complement: LBC807 Series. ● Pb-Free Package is available.

General Purpose Transistors

General Purpose Transistors NPN Silicon FEATURE ● Collector current capability IC = 500 mA. ● Collector-emitter voltage VCEO(max) = 45 V. ● General purpose switching and amplification. ● PNP complement: LBC807 Series. ● Pb-Free Package is available.

General Purpose Transistors

General Purpose Transistors NPN Silicon FEATURE ● Collector current capability IC = 500 mA. ● Collector-emitter voltage VCEO(max) = 45 V. ● General purpose switching and amplification. ● PNP complement: LBC807 Series. ● Pb-Free Package is available.

NPN/PNP Silicon Transistor Array

NPN Silicon AF Transistor Array • For AF stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP transistors in one package • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

NPN Silicon AF Transistor Array

文件：76.1 Kbytes Page：7 Pages

TRANSISTOR:Genreal Purpuse

AF 通用晶体管

NPN Silicon AF Transistor Array

文件：77.51 Kbytes Page：7 Pages

NPN Silicon AF Transistor Array

文件：530.37 Kbytes Page：7 Pages

NPN Silicon AF Transistor Array

文件：77.51 Kbytes Page：7 Pages

NPN Silicon AF Transistor Array

文件：530.37 Kbytes Page：7 Pages

817 photocoupler consist of one piece of GaAs emitter and one piece of NPN transistor

Current Conversion Ratio (Min 50 Working Condition IF=5mA, VCE=5V) Insulation Voltage = 5,000Vrms Response Time (tr: TYP. 4μs working condition VCE=2V, IC=2mA, RL=100 Ω) UL approved: UL1577, file No. E492440

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