45V,500mANPNgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NPNgeneralpurposetransistor

DESCRIPTION NPNtransistorinaSOT23plasticpackage. PNPcomplement:BC807. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification.

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryPNPTypesAvailable(BC807)

NPNSiliconAFTransistors

●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC807,BC808(PNP)

NPNSURFACEMOUNTSMALLSIGNALTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ForSwitching,AFDriverandAmplifierApplications ●ComplementaryPNPTypesAvailable(BC807)

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 45V 0.5A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 45V 0.5A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

45VNPNSMALLSIGNALTRANSISTORINSOT23

Features BVCEO>45V IC=0.5AContinuousCollectorCurrent ICM=1APeakPulseCurrent ComplementaryPNPTypes:BC807-16 IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitchingandAFAmplifierApplications TotallyLead-Free&FullyRoHSComp