PNP Silicon AF Transistors (For general AF applications High collector current High current gain)

●For general AF applications ●High collector current ●High current gain ●Low collector-emitter saturation voltage ●Complementary types: BC 817, BC 818 (NPN)

Switching and Amplifier Applications

Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC817/BC818

Surface mount Si-Epitaxial PlanarTransistors

Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 310 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

PNP Silicon AF Transistors

PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

PNP Silicon General Purpose Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 0.3Watts of Power Dissipation. • Collector-current 0.8A • Operating and storage junction temperature range: -65°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moi