BC807-2价格

参考价格:¥0.0656

型号:BC807-25,215 品牌:NXP 备注:这里有BC807-2多少钱,2024年最近7天走势,今日出价,今日竞价,BC807-2批发/采购报价,BC807-2行情走势销售排行榜,BC807-2报价。
型号 功能描述 生产厂家&企业 LOGO 操作

PNPSURFACEMOUNTTRANSISTOR

Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryNPNTypesAvailable(BC817)

TRSYS

Transys Electronics

TRSYS

SwitchingandAmplifierApplications

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PNPSURFACEMOUNTTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

PNPSiliconAFTransistors

PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BC817.../W,BC818.../W(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SurfacemountSi-EpitaxialPlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation310mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDIOTEC

德欧泰克

Diotec

PNPGeneralPurposeAmplifier

SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

SMALLSIGNALPNPTRANSISTORS

TypeMarking BC807-255B BC807-405C ■SILICONEPITAXIALPLANARPNPTRANSISTORS ■MINIATURESOT-23PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THENPNCOMPLEMENTARYTYPESAREBC817-25ANDBC817-40RESPECTIVELY APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

PNPSURFACEMOUNTTRANSISTOR

Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifierApplications ComplementaryNPNTypesAvailable(BC817)

TEL

TRANSYS Electronics Limited

TEL

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistorPNPSilicon P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON

PNPgeneralpurposetransistor

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC817. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

PNPSURFACEMOUNTTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

0.3WattsPNPPlastic-EncapsulateTransistors

Features —Ideallysuitedforautomaticinsertion —Epitaxialplanardieconstruction —Forswitching,AFdriverandamplifierapplications —ComplementaryNPNtypeavailable(BC817) —QualifiedtoAEC-Q101standardsforhighreliability MechanicalData —Case:SOT-23,Molded

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

PNPGENERALPURPOSETRANSISTORS

VOLTAGE45Volts POWER225mWatts FEATURES •Generalpurposeamplifierapplications •PNPepitaxialsilicon,planardesign •CollectorcurrentIC=500mA •Pbfreeproductareavailable:99Snabovecanmeet RoHSenvironmentsubstancedirectiverequest MECHANICALDATA Case:SOT-2

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

PNPGeneralPurposeAmplifier

FEATURES Ideallysuitedforautomaticinsertion. ComplementaryNPNtypeavailableBC817 Epitaxialplanardieconstruction. APPLICATIONS Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplicationsatcurrentsto1.0A.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

PNPSiliconGeneralPurposeTransistors

Features •Capableof0.3WattsofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage50V •Operatingandstoragejunctiontemperaturerange:-55OCto+150OC •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

TRANSISTOR(PNP)

FEATURES ·Ldeallysuitedforautomaticinsertion ·epitaxialplanardieconstruction ·complementaryNPNtypeavailable(BC817)

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrentHighcurrentgain)

●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC817,BC818(NPN)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS

PNPSiliconGeneralPurposeTransistors

Features •Capableof0.3WattsofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage50V •Operatingandstoragejunctiontemperaturerange:-55OCto+150OC •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

SmallSignalTransistors(PNP)

Features •PNPSiliconEpitaxialPlanarTransistorsforswitching,AFdriverandamplifierapplications. •Especiallysuitedforautomaticinsertioninthickandthin-filmcircuits. •Thesetransistorsaresubdividedintothreegroups(-16,-25,and-40)accordingtotheircurrentgain. •Asc

GE

GE Industrial Company

GE

Ldeallysuitedforautomaticinsertion

FEATURES ·Ldeallysuitedforautomaticinsertion ·epitaxialplanardieconstruction ·complementaryNPNtypeavailable(BC817)

GWSEMIGoodwork Semiconductor Co., Ltd .

唯聖電子唯聖電子有限公司

GWSEMI

PNPSURFACEMOUNTTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

PNPSURFACEMOUNTTRANSISTOR

Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

SiliconPNPGeneralPurposeTransistors

Features SiliconPNPEpitaxialtype ExcellentDCcurrentgaincharacteristics Generalpurposeamplifierapplication AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcomplement:BC817-AUseries

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

SiliconPNPGeneralPurposeTransistors

Features SiliconPNPEpitaxialtype ExcellentDCcurrentgaincharacteristics Generalpurposeamplifierapplication AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcomplement:BC817-AUseries

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

45V,500mAPNPgeneral-purposetransistors

Featuresandbenefits Threecurrentgainselections High-temperatureapplicationsupto175°C AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors(PNPSilicon)

GeneralPurposeTransistors PNPSilicon

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon

MotorolaMotorola, Inc

摩托罗拉

Motorola

GeneralPurposeTransistors(PNPSilicon)

GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors(PNPSilicon)

GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors(PNPSilicon)

GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

GeneralPurposeTransistors

GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

45V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mANPNgeneral-purposetransistors

Featuresandbenefits •Highcurrent •Threecurrentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mANPNgeneral-purposetransistors

Featuresandbenefits *General-purposetransistor *Twocurrentgainselections *Lowpackageheightof0.37mm *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mAPNPgeneral-purposetransistors

Featuresandbenefits *General-purposetransistor *Twocurrentgainselections *Lowpackageheightof0.37mm *AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mANPNgeneral-purposetransistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •High-temperatureappli

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mANPNgeneral-purposetransistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •High-temperatureappli

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mANPNgeneral-purposetransistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mANPNgeneral-purposetransistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •High-temperatureappli

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mANPNgeneral-purposetransistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •High-temperatureappli

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mAPNPgeneral-purposetransistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

45V,500mANPNgeneral-purposetransistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA

PNPSiliconGeneralPurposeTransistors

Features •Capableof0.3WattsofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage50V •Operatingandstoragejunctiontemperaturerange:-55OCto+150OC •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

PNPSILICONGENERALPURPOSETRANSISTORS

Features ●LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ●EpoxymeetsUL94V-0flammabilityrating ●MoisureSensitivityLevel1 ●Capableof0.2WattsofPowerDissipation. ●Collector-current0.5A ●Operatingandstoragejunctiontemper

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

PNPSiliconAFTransistor(ForgeneralAFapplicationsHighcollectorcurrentHighcurrentgain)

PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BC817W,BC818W(NPN)

SIEMENSSiemens Ltd

西门子德国西门子股份公司

SIEMENS

TRANSISTOR(PNP)

FEATURES •Ldeallysuitedforautomaticinsertion •epitaxialplanardieconstruction •complementaryNPNtypeavailable(BC817)

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

200mW,PNPSmallSignalTransistor

Features ◇Epitaxialplanardieconstruction ◇Surfacedevicetypemounting ◇Moisturesensitivitylevel1 ◇MatteTin(Sn)leadfinishwithNickel(Ni)underplate ◇PbfreeversionandRoHScompliant ◇Greencompound(Halogenfree)withsuffixGonpackingcodeandprefixGondatecode

TSCTaiwan Semiconductor Company, Ltd

台半 台湾半导体股份有限公司

TSC

PNPSiliconAFTransistors

PNPSiliconAFTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BC817W,BC818W(NPN)

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation225mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandr

DiotecDIOTEC

德欧泰克

Diotec

PNPSURFACEMOUNTTRANSISTOR

Features •IdeallySuitedforAutomaticInsertion •EpitaxialPlanarDieConstruction •ForSwitching,AFDriverandAmplifierApplications •ComplementaryNPNTypesAvailable(BC817-xxW) •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2)

DIODESDiodes Incorporated

达尔科技

DIODES

PNPgeneralpurposetransistor

DESCRIPTION PNPtransistorinaSOT323plasticpackage,forgeneralswitchingandamplification. FEATURES •Highcurrent •S-minipackage.

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips

BC807-2产品属性

  • 类型

    描述

  • 型号

    BC807-2

  • 功能描述

    两极晶体管 - BJT Transistor 300mW

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-6-22 19:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
22+
SOT23
6452
只做原装正品现货!或订货假一赔十!
ON
23+
SOT23
20000
原厂原装正品现货
ON
22+
SMD
518000
明嘉莱只做原装正品现货
ON
21+
SOT23
93000
ON/安森美
23+
SOT23
38316
正规渠道,免费送样。支持账期,BOM一站式配齐
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
ON
07+
SOT23
50000
深圳现货
ON
17+
SOT23
9700
绝对原装正品现货假一罚十
ON
SOT-23
2008
新进库存/原装
ON/安森美
2046+
9852
只做原装正品现货!或订货假一赔十!

BC807-2芯片相关品牌

  • API
  • APITECH
  • BOARDCOM
  • crydom
  • Hitachi
  • IDT
  • LUGUANG
  • MOLEX4
  • NEC
  • POWEREX
  • SILABS
  • SUPERWORLD

BC807-2数据表相关新闻