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BC807-2价格
参考价格:¥0.0656
型号:BC807-25,215 品牌:NXP 备注:这里有BC807-2多少钱,2024年最近7天走势,今日出价,今日竞价,BC807-2批发/采购报价,BC807-2行情走势销售排行榜,BC807-2报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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PNPSURFACEMOUNTTRANSISTOR Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifier Applications ComplementaryNPNTypesAvailable(BC817) | TRSYS Transys Electronics | |||
SwitchingandAmplifierApplications SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PNPSURFACEMOUNTTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) | DIODESDiodes Incorporated 达尔科技 | |||
PNPSiliconAFTransistors PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytype:BC817.../W,BC818.../W(NPN) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SurfacemountSi-EpitaxialPlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation310mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDIOTEC 德欧泰克 | |||
PNPGeneralPurposeAmplifier SwitchingandAmplifierApplications •SuitableforAF-Driverstagesandlowpoweroutputstages •ComplementtoBC817/BC818 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
SMALLSIGNALPNPTRANSISTORS TypeMarking BC807-255B BC807-405C ■SILICONEPITAXIALPLANARPNPTRANSISTORS ■MINIATURESOT-23PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPEANDREELPACKING ■THENPNCOMPLEMENTARYTYPESAREBC817-25ANDBC817-40RESPECTIVELY APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
PNPSURFACEMOUNTTRANSISTOR Features 310mWPowerDissipation IdeallySuitedforAutomaticInsertion EpitaxialPlanarDieConstruction ForSwitching,AFDriverandAmplifierApplications ComplementaryNPNTypesAvailable(BC817) | TEL TRANSYS Electronics Limited | |||
GeneralPurposeTransistorPNPSilicon GeneralPurposeTransistorPNPSilicon P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | |||
PNPgeneralpurposetransistor DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC817. FEATURES •Highcurrent(max.500mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
PNPSURFACEMOUNTTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) | DIODESDiodes Incorporated 达尔科技 | |||
0.3WattsPNPPlastic-EncapsulateTransistors Features Ideallysuitedforautomaticinsertion Epitaxialplanardieconstruction Forswitching,AFdriverandamplifierapplications ComplementaryNPNtypeavailable(BC817) QualifiedtoAEC-Q101standardsforhighreliability MechanicalData Case:SOT-23,Molded | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
PNPGENERALPURPOSETRANSISTORS VOLTAGE45Volts POWER225mWatts FEATURES •Generalpurposeamplifierapplications •PNPepitaxialsilicon,planardesign •CollectorcurrentIC=500mA •Pbfreeproductareavailable:99Snabovecanmeet RoHSenvironmentsubstancedirectiverequest MECHANICALDATA Case:SOT-2 | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
PNPGeneralPurposeAmplifier FEATURES Ideallysuitedforautomaticinsertion. ComplementaryNPNtypeavailableBC817 Epitaxialplanardieconstruction. APPLICATIONS Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplicationsatcurrentsto1.0A. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
PNPSiliconGeneralPurposeTransistors Features •Capableof0.3WattsofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage50V •Operatingandstoragejunctiontemperaturerange:-55OCto+150OC •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
TRANSISTOR(PNP) FEATURES ·Ldeallysuitedforautomaticinsertion ·epitaxialplanardieconstruction ·complementaryNPNtypeavailable(BC817) | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
PNPSiliconAFTransistors(ForgeneralAFapplicationsHighcollectorcurrentHighcurrentgain) ●ForgeneralAFapplications ●Highcollectorcurrent ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BC817,BC818(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
PNPSiliconGeneralPurposeTransistors Features •Capableof0.3WattsofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage50V •Operatingandstoragejunctiontemperaturerange:-55OCto+150OC •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SmallSignalTransistors(PNP) Features •PNPSiliconEpitaxialPlanarTransistorsforswitching,AFdriverandamplifierapplications. •Especiallysuitedforautomaticinsertioninthickandthin-filmcircuits. •Thesetransistorsaresubdividedintothreegroups(-16,-25,and-40)accordingtotheircurrentgain. •Asc | GE GE Industrial Company | |||
Ldeallysuitedforautomaticinsertion FEATURES ·Ldeallysuitedforautomaticinsertion ·epitaxialplanardieconstruction ·complementaryNPNtypeavailable(BC817) | GWSEMIGoodwork Semiconductor Co., Ltd . 唯聖電子唯聖電子有限公司 | |||
PNPSURFACEMOUNTTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) | DIODESDiodes Incorporated 达尔科技 | |||
PNPSURFACEMOUNTTRANSISTOR Features ●IdeallySuitedforAutomaticInsertion ●EpitaxialPlanarDieConstruction ●ComplementaryNPNTypesAvailable(BC817) ●ForswitchingandAFAmplifierApplications ●TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ●HalogenandAntimonyFree.GreenDevice(Note3) | DIODESDiodes Incorporated 达尔科技 | |||
SiliconPNPGeneralPurposeTransistors Features SiliconPNPEpitaxialtype ExcellentDCcurrentgaincharacteristics Generalpurposeamplifierapplication AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcomplement:BC817-AUseries | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
SiliconPNPGeneralPurposeTransistors Features SiliconPNPEpitaxialtype ExcellentDCcurrentgaincharacteristics Generalpurposeamplifierapplication AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard NPNcomplement:BC817-AUseries | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits Threecurrentgainselections High-temperatureapplicationsupto175°C AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors(PNPSilicon) GeneralPurposeTransistors PNPSilicon | LRCLeshan Radio Co., Ltd 乐山无线电乐山无线电股份有限公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon | MotorolaMotorola, Inc 摩托罗拉 | |||
GeneralPurposeTransistors(PNPSilicon) GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors(PNPSilicon) GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors(PNPSilicon) GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeTransistors GeneralPurposeTransistors PNPSilicon Features •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplicationsRequiringUniqueSiteandControlChangeRequirements •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highcurrent •Threecurrentgainselections •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits *General-purposetransistor *Twocurrentgainselections *Lowpackageheightof0.37mm *AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits *General-purposetransistor *Twocurrentgainselections *Lowpackageheightof0.37mm *AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •High-temperatureappli | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •High-temperatureappli | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •High-temperatureappli | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •High-temperatureappli | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mAPNPgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
45V,500mANPNgeneral-purposetransistors Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
PNPSiliconGeneralPurposeTransistors Features •Capableof0.3WattsofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage50V •Operatingandstoragejunctiontemperaturerange:-55OCto+150OC •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
PNPSILICONGENERALPURPOSETRANSISTORS Features ●LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ●EpoxymeetsUL94V-0flammabilityrating ●MoisureSensitivityLevel1 ●Capableof0.2WattsofPowerDissipation. ●Collector-current0.5A ●Operatingandstoragejunctiontemper | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | |||
PNPSiliconAFTransistor(ForgeneralAFapplicationsHighcollectorcurrentHighcurrentgain) PNPSiliconAFTransistor •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BC817W,BC818W(NPN) | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
TRANSISTOR(PNP) FEATURES •Ldeallysuitedforautomaticinsertion •epitaxialplanardieconstruction •complementaryNPNtypeavailable(BC817) | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
200mW,PNPSmallSignalTransistor Features ◇Epitaxialplanardieconstruction ◇Surfacedevicetypemounting ◇Moisturesensitivitylevel1 ◇MatteTin(Sn)leadfinishwithNickel(Ni)underplate ◇PbfreeversionandRoHScompliant ◇Greencompound(Halogenfree)withsuffixGonpackingcodeandprefixGondatecode | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
PNPSiliconAFTransistors PNPSiliconAFTransistors •ForgeneralAFapplications •Highcollectorcurrent •Highcurrentgain •Lowcollector-emittersaturationvoltage •Complementarytypes:BC817W,BC818W(NPN) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
SurfacemountSi-EpitaxialPlanarTransistors SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation225mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandr | DiotecDIOTEC 德欧泰克 | |||
PNPSURFACEMOUNTTRANSISTOR Features •IdeallySuitedforAutomaticInsertion •EpitaxialPlanarDieConstruction •ForSwitching,AFDriverandAmplifierApplications •ComplementaryNPNTypesAvailable(BC817-xxW) •LeadFreeByDesign/RoHSCompliant(Note1) •GreenDevice(Note2) | DIODESDiodes Incorporated 达尔科技 | |||
PNPgeneralpurposetransistor DESCRIPTION PNPtransistorinaSOT323plasticpackage,forgeneralswitchingandamplification. FEATURES •Highcurrent •S-minipackage. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |
BC807-2产品属性
- 类型
描述
- 型号
BC807-2
- 功能描述
两极晶体管 - BJT Transistor 300mW
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
SOT23 |
6452 |
只做原装正品现货!或订货假一赔十! |
|||
ON |
23+ |
SOT23 |
20000 |
原厂原装正品现货 |
|||
ON |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
|||
ON |
21+ |
SOT23 |
93000 |
||||
ON/安森美 |
23+ |
SOT23 |
38316 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
ON |
07+ |
SOT23 |
50000 |
深圳现货 |
|||
ON |
17+ |
SOT23 |
9700 |
绝对原装正品现货假一罚十 |
|||
ON |
SOT-23 |
2008 |
新进库存/原装 |
||||
ON/安森美 |
2046+ |
9852 |
只做原装正品现货!或订货假一赔十! |
BC807-2规格书下载地址
BC807-2参数引脚图相关
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BC807-2数据表相关新闻
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2019-8-22
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
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