NPN SILICON PLANAR TRANSISTORS

Low Noise General Purpose Audio Amplifiers

NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BC107, BC108, BC109 series types are small signal NPN silicon transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

Low Power Bipolar Transistors

Features: NPN Silicon Planar Epitaxial Transistors. Suitable for applications requiring low noise and good hFE linearity, eg. audio pre-amplifiers, and instrumentation.

LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS

The BC107, BC108 and BC109 are silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. The complementary PNP are BC177, BC178 and BC179. Complia

npn sisicon transistor

NPN Transistor Bare Die

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Low noise general purpose audio amplifiers

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封装/外壳：TO-206AA，TO-18-3 金属罐 包装：卷带（TR） 描述：TRANS NPN 45V 0.1A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Junction Transistors

NPN Silicon Planar Transistors BC107 / BC108 Series

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TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

TMOS Switching(N-Channel-Enhancement)

TMOS Switching N–Channel — Enhancement

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP