Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Superior cross modulation characteristics. • High gain; (PG = 28 dB typ. at f = 200 MHz) • Wide supply voltage range; Appli

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Build in Biasing Circuit MOS FET IC\nUHF/VHF RF Amplifier •  Build in Biasing Circuit; To reduce using parts cost & PC board space.\n•  High gain;\n•  Wide supply voltage range; Applicable with 5V to 9V supply voltage.\n•  Provide mini mold packages; MPAK-4R(SOT-143 var.);

UHF variable capacitance diode

DESCRIPTION The BB405B is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 3 • Hermetically sealed leaded glass SOD68 (DO-34) package

UHF variable capacitance diode

DESCRIPTION The BB405B is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 3 • Hermetically sealed leaded glass SOD68 (DO-34) package

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

DESCRIPTION These Easy-to-Drive FASTSWITCH NPN power transistors are specially designed for high reliability industrial and professional power driving applications such us motor drives and off-line switching power supplies. ETD transistors will operate using easy drive circuits at up to 100KHz;

20W TO 140W STEP-DOWN SWITCHING REGULATOR FAMILY

DESCRIPTION The GS-R400/2 series is a family of small sized high current, high voltage step-down switching regulators. The integral heatsink allows a large power handling capability and it provides also an effective shielding to minimize EMI. FEATURES MTBF in excess of 500,000 hours

Low-Cost, Low-Power, 110MHz Op Amp with Disable

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