Build in Biasing Circuit MOS FET IC

UHF/VHF RF Amplifier

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• Superior cross modulation characteristics.

• High gain;

(PG = 28 dB typ. at f = 200 MHz)

• Wide supply voltage range; Applicable with 5V to 9V supply voltage.

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; MPAK-4R(SOT-143 var.)