Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

Transistors>Amplifiers/MOSFETs

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4(SOT-1

Socket terminal strip Screw connection

The socket terminal strip 302 is one of our smallest socket terminal strips. It is available in 8 mm pitch with 1- to 12-pole design and can be easily cut to the desired number of poles. The flexible polyamide moulding can even be mounted on curved surfaces. The wire protector of the “HDS”-ver

2 (50.8 mm) Single Turn Wirewound Precision Potentiometer

FEATURES • Screw, servo and bushing mount types available • Large range of ohmic values: 5  to 85 k • Extra taps upon request • Gangable up to 6 sections on a same shaft • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Indicates Phase Presence

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Extra taps upon request

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SCREW TYPE SERIES

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