Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-4(SOT-

Build in Biasing Circuit MOS FET IC VHF RF Amplifier

Socket terminal strip Screw connection

The socket terminal strip 302 is one of our smallest socket terminal strips. It is available in 8 mm pitch with 1- to 12-pole design and can be easily cut to the desired number of poles. The flexible polyamide moulding can even be mounted on curved surfaces. The wire protector of the “HDS”-ver

2 (50.8 mm) Single Turn Wirewound Precision Potentiometer

FEATURES • Screw, servo and bushing mount types available • Large range of ohmic values: 5  to 85 k • Extra taps upon request • Gangable up to 6 sections on a same shaft • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

SCREW TYPE SERIES

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Indicates Phase Presence

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Extra taps upon request

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