Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packag

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode . Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packag

3/2-Way Miniature Solenoid Valve, Sub-base connection

Applications • Neutral gases and liquids • Pneumatic control • Vacuum • Shut-off, dosing, filling and ventilating • Small scale instruments, laboratory and measuring equipment • Gas control, welding equipment

SCREW TYPE SERIES

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Silver Oxide Batteries

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INTERCONNECTS 2,54 Grid (0,46 dia.) Pins, Straight and Right Angle Single Row

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