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位置：首页 > IC中文资料第6938页 > BB1

BB1晶体管资料

  • BB11A,B别名：BB11A,B三极管、BB11A,B晶体管、BB11A,B晶体三极管

  • BB11A,B生产厂家：

  • BB11A,B制作材料：UJT-P

  • BB11A,B性质：

  • BB11A,B封装形式：直插封装

  • BB11A,B极限工作电压：

  • BB11A,B最大电流允许值：0.002A

  • BB11A,B最大工作频率：<1MHZ或未知

  • BB11A,B引脚数：4

  • BB11A,B最大耗散功率：

  • BB11A,B放大倍数：

  • BB11A,B图片代号：D-13

  • BB11A,Bvtest：0

  • BB11A,Bhtest：999900

  • BB11A,Batest：.002

  • BB11A,Bwtest：0

  • BB11A,B代换 BB11A,B用什么型号代替：

BB1价格

参考价格：￥1.0400

型号：BB101CAU 品牌：HITACHI 备注：这里有BB1多少钱，2024年最近7天走势，今日出价，今日竞价，BB1批发/采购报价，BB1行情走势销售排行榜，BB1报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BB1

COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching

on-chipresistorNPNsiliconepitaxialtransistorFormid-speedswitching TheBB1SeriesisanNtypesmallsignaltransistorandenablesthereductionofcomponentcountsanddownsizingofsetsduetoon-chipresistors.Thistransistorisespeciallyidealforuseinhouseholdelectronicapplianc

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
BB1

Single Row Terminal Blocks Continued

TerminalBlocks-SingleRow CoverOptions-SingleRow

COOPER

科普斯株洲市科普斯科技有限公司

COOPER
BB1000-EU

Single Phase AC Power Analyzer Datasheet

SinglePhaseACPowerAnalyzerDatasheet TheTektronixPA1000isasingle-phase,single-channelpoweranalysissolutionthatisoptimizedforfast,efficient,andaccuratepowerconsumptiontestingtointernationalstandards.Itscompactsize,DMM-likeuser-interface,graphicaldisplay,andpower

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

TEKTRONIX
BB1000-NA

Single Phase AC Power Analyzer Datasheet

SinglePhaseACPowerAnalyzerDatasheet TheTektronixPA1000isasingle-phase,single-channelpoweranalysissolutionthatisoptimizedforfast,efficient,andaccuratepowerconsumptiontestingtointernationalstandards.Itscompactsize,DMM-likeuser-interface,graphicaldisplay,andpower

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

TEKTRONIX
BB1000-UK

Single Phase AC Power Analyzer Datasheet

SinglePhaseACPowerAnalyzerDatasheet TheTektronixPA1000isasingle-phase,single-channelpoweranalysissolutionthatisoptimizedforfast,efficient,andaccuratepowerconsumptiontestingtointernationalstandards.Itscompactsize,DMM-likeuser-interface,graphicaldisplay,andpower

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

TEKTRONIX
BB1000-UN

Four-channel, Multi-phase AC/DC Power Analyzer

Four-channel,Multi-phaseAC/DCPowerAnalyzer TheTektronixPA3000isaonetofourchannelpoweranalyzerthatisoptimizedfortestingtoday’ssingleandmulti-phase,highefficiencypowerconversionproductsanddesigns.Useittoquicklyvisualize,analyze,anddocumentpowerefficiency,ene

TEKTRONIXTektronix

泰克泰克科技(中国)有限公司

TEKTRONIX
BB101C

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;CMPAK-4(SOT-

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB101C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi, Ltd.

日立公司

Hitachi
BB101CAU-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;CMPAK-4(SOT-

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB101M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi, Ltd.

日立公司

Hitachi
BB101M

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB101MAU-TL-E

Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) •WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
BB102C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.1dBtyp.atf=900MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;CMPAK-4(SOT-

HitachiHitachi, Ltd.

日立公司

Hitachi
BB102M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features •BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. •Lownoisecharacteristics;(NF=2.1dBtyp.atf=900MHz) •WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. •Provideminimoldpackages;MPAK-4(SOT-1

HitachiHitachi, Ltd.

日立公司

Hitachi
BB1110RC

Resistor capacitor network Thick film resistors Ceramic chip capacitors

DISCRIPTION ModelBB1110RCisdesignedforterminatinghigh-speedmemorybuses.Ideallysuitedforlocaldecouplingofdatalinedrivers.Thesespecialtynetworksemploysolderballsforsurfacemountflipchipattachment.Theiruniqueconstructionyieldsextremelylowcapacitanceandinductance

BITECH

瑞谷拜特上海瑞谷拜特软件技术有限公司

BITECH
BB1110RC13

Resistor capacitor network Thick film resistors Ceramic chip capacitors

DISCRIPTION ModelBB1110RCisdesignedforterminatinghigh-speedmemorybuses.Ideallysuitedforlocaldecouplingofdatalinedrivers.Thesespecialtynetworksemploysolderballsforsurfacemountflipchipattachment.Theiruniqueconstructionyieldsextremelylowcapacitanceandinductance

BITECH

瑞谷拜特上海瑞谷拜特软件技术有限公司

BITECH
BB1110RC7

Resistor capacitor network Thick film resistors Ceramic chip capacitors

DISCRIPTION ModelBB1110RCisdesignedforterminatinghigh-speedmemorybuses.Ideallysuitedforlocaldecouplingofdatalinedrivers.Thesespecialtynetworksemploysolderballsforsurfacemountflipchipattachment.Theiruniqueconstructionyieldsextremelylowcapacitanceandinductance

BITECH

瑞谷拜特上海瑞谷拜特软件技术有限公司

BITECH
BB112

Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ??8.0 V)

SiliconVariableCapacitanceDiode ●ForAMtuningapplications ●Specifiedtuningrange1…8.0V

SIEMENS

Siemens Ltd

SIEMENS
BB119

Variable capacitance diode

DESCRIPTION TheBB119isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedinthehermeticallysealedleadedglassSOD27(DO-35)package. FEATURES •HermeticallysealedleadedglassSOD27(DO-35)package •C10:17pF;ratio:1.3. APPLICATIONS •Automaticfrequen

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB130

AM variable capacitance diode

DESCRIPTION TheBB130isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD69(TO-92variant)leadedplasticpackage. FEATURES •Matchedto3 •Leadedplasticpackage •C28:18pF;ratio:27. APPLICATIONS •ElectronictuninginAMradioapplications

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB131

VHF variable capacitance diode

DESCRIPTION TheBB131isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. FEATURES •Excellentlinearity •VerysmallplasticSMDpackage •C28:1pF;ratio:14. APPLICATIONS •Electronictuninginsatellitetuners

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB131

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BB132

VHF variable capacitance diode

DESCRIPTION TheBB132isavariablecapacitancediodefabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure. FEATURES •Highlinearity •Excell

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB132

VHF Variable Capacitance Diode

DESCRIPTION TheBB132isavariablecapacitancediodefabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure. FEATURES •Highlinearity •Excell

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC
BB132S

Mobile Load Coil Antenna

PREMIUMMOBILELOADCOILANTENNASAREINDUSTRYSTANDARD Lairdsongoingcommitmenttorefinementinmechanicalandelectricaldesignhasresultedinthemosttechnicallyadvancedmobileloadcoilantennasonthemarket.Exclusivefeaturessuchasstainlesssteelwhips,housingsconstructedwithAB

LSTD

Laird Tech Smart Technology

LSTD
BB133

VHF variable capacitance diode

DESCRIPTION TheBB133isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure.Theunmatchedtype,BB150hasthesa

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB133

VHF Variable Capacitance Diode

DESCRIPTION TheBB133isavariablecapacitancediodefabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure.Theunmatchedtype,BB150hasthesa

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC
BB133

VHF Variable Capacitance Diode

DESCRIPTION TheBB133isavariablecapacitancediodefabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure.Theunmatchedtype,BB150hasthesa

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
BB133T1

VHF Variable Capacitance Diode

DESCRIPTION TheBB133T1isavariablecapacitancediodefabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure.Theunmatchedtype,BB150hasthe

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC
BB134

UHF variable capacitance diode

DESCRIPTION TheBB134isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Theexcellentmatchingperformanceisachievedbyadirectmatchingassemblyprocedure.Theunmatchedtype,BB135hasthesamespecification. FE

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB134

UHF Variable Capacitance Diode

DESCRIPTION TheBB134isavariablecapacitancediodefabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Theexcellentmatchingperformanceisachievedbyadirectmatchingassemblyprocedure.Theunmatchedtype,BB135hasthesamespecification. FEA

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC
BB135

UHF Variable Capacitance Diode

DESCRIPTION TheBB135isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Thematchedtype,BB134hasthesamespecification. FEATURES •Excellentlinearity •VerysmallplasticSMDpackage. •C28:1.9pF;ratio:10

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC
BB135

UHF variable capacitance diode

DESCRIPTION TheBB135isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Thematchedtype,BB134hasthesamespecification. FEATURES •Excellentlinearity •VerysmallplasticSMDpackage. •C28:1.9pF;ratio:10

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB135

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BB141

Low-voltage variable capacitance diode

DESCRIPTION TheBB141isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedinthe SOD523(SC-79)ultrasmallplasticSMDpackage. FEATURES •Excellentlinearity •UltrasmallplasticSMDpackage •C4:2.38pF;ratio:1.76 •Lowseriesresistance. APPLICATIONS

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB141

Low-voltage variable capacitance diode

DESCRIPTION TheBB141isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD523(SC-79)ultrasmallplasticSMDpackage. FEATURES •Excellentlinearity •UltrasmallplasticSMDpackage •C4:2.38pF;ratio:1.76 •Lowseriesresistance. APPLICATIONS

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC
BB142

Low-voltage variable capacitance diode

DESCRIPTION TheBB142isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD523(SC-79)ultrasmallplasticSMDpackage. FEATURES •Excellentlinearity •UltrasmallplasticSMDpackage •C4:2.05pF;ratio:2.2 •Lowseriesresistance. APPLICATIONS •

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC
BB142

Low-voltage variable capacitance diode

DESCRIPTION TheBB142isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedinthe SOD523(SC-79)ultrasmallplasticSMDpackage. FEATURES •Excellentlinearity •UltrasmallplasticSMDpackage •C4:2.05pF;ratio:2.2 •Lowseriesresistance. APPLICATIONS

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB143

Low-voltage variable capacitance diode

DESCRIPTION TheBB143isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD523(SC-79)ultrasmallplasticSMDpackage. FEATURES •Excellentlinearity •UltrasmallplasticSMDpackage •C4:2.25pF;ratio:2.35 •Lowseriesresistance. APPLICATIONS

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB143

Low-voltage variable capacitance diode

DESCRIPTION TheBB143isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD523(SC-79)ultrasmallplasticSMDpackage. FEATURES •Excellentlinearity •UltrasmallplasticSMDpackage •C4:2.25pF;ratio:2.35 •Lowseriesresistance. APPLICATIONS

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC
BB145

Low-voltage variable capacitance diode

DESCRIPTION TheBB145isaplanartechnologyvariablecapacitancediodeinaSOD523(SC-79)package. FEATURES •UltrasmallplasticSMDpackage •C4:3pF;ratio:2.1 •Lowseriesresistance. APPLICATIONS •Voltagecontrolledoscillators(VCO).

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB145

Low-voltage variable capacitance diode

DESCRIPTION TheBB145isaplanartechnologyvariablecapacitancediodeinaSOD523(SC-79)package. FEATURES •UltrasmallplasticSMDpackage •C4:3pF;ratio:2.1 •Lowseriesresistance. APPLICATIONS •Voltagecontrolledoscillators(VCO).

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC
BB145B

Low-voltage variable capacitance diode

DESCRIPTION TheBB145BisaplanartechnologyvariablecapacitancediodeinaSOD523(SC-79)package. FEATURES •UltrasmallplasticSMDpackage •C4:2.75pF;ratio:2.4 •Lowseriesresistance. APPLICATIONS •Voltagecontrolledoscillators(VCO).

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB145B

Low-voltage variable capacitance diode?

DESCRIPTION TheBB145BisaplanartechnologyvariablecapacitancediodeinaSOD523(SC-79)package. FEATURES •UltrasmallplasticSMDpackage •C4:2.75pF;ratio:2.4 •Lowseriesresistance. APPLICATIONS •Voltagecontrolledoscillators(VCO).

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC
BB145B

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BB145B

Low-voltage variable capacitance diode

FEATURES UltrasmallplasticSMDpackage C4:2.75pF;ratio:2.4 Lowseriesresistance. APPLICATIONS Voltagecontrolledoscillators(VCO). DESCRIPTION TheBB145Bisaplanartechnologyvariablecapacitance diodeinaSOD523(SC-79)package.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BB145B_V01

Low-voltage variable capacitance diode

FEATURES UltrasmallplasticSMDpackage C4:2.75pF;ratio:2.4 Lowseriesresistance. APPLICATIONS Voltagecontrolledoscillators(VCO). DESCRIPTION TheBB145Bisaplanartechnologyvariablecapacitance diodeinaSOD523(SC-79)package.

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BB145B-01

Low-voltage variable capacitance diode

DESCRIPTION TheBB145B-01isaplanartechnologyvariablecapacitancediodeinaSOD723package. FEATURES •UltrasmallplasticSMDpackage •C4:2.75pF;ratio:2.4 •Lowseriesresistance. APPLICATIONS •Voltagecontrolledoscillators(VCO).

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB145C

Low-voltage variable capacitance diode

DESCRIPTION TheBB145Cisavariablecapacitancediode,fabricatedinplanartechnologyandencapsulatedintheSOD523ultrasmallplasticSMDpackage. FEATURES •UltrasmallplasticSMDpackage •Verylowcapacitancespread •Highcapacitanceratio •C1toC4ratio:min.2.39,max.2.53. A

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB146

UHF variable capacitance diode

DESCRIPTION TheBB146isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure. FEATURES •Ultrahighratio •Exc

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB1460

1460 tie-point Solderless Plug-in BreadBoard with power rails

Features: •1460tiepointstotal:1260tie-pointIC-circuitareaplustwo100tie-pointdistributionstrips providingfourpowerrails. •ABSplasticbodywithblackprintedlegend.Colorlegendondistributionstrips. •ContactsarePhosphorBronzewithPlatedNickelFinish,ratedfor50,000

BUSBOARDBusBoard Prototype Systems Ltd.

BUSBOARDBusBoard Prototype Systems Ltd.

BUSBOARD
BB148

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BB149

UHF variable capacitance diode

DESCRIPTION TheBB149isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure.Theunmatchedtype,BB159hasthesa

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB149

UHF variable capacitance diode

DESCRIPTION TheBB149isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure.Theunmatchedtype,BB159hasthesa

LRCLeshan Radio Co., Ltd

乐山无线电乐山无线电股份有限公司

LRC
BB149

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BB149A

UHF variable capacitance diode

DESCRIPTION TheBB149Aisaplanartechnologyvariablecapacitancediode,inaSOD323verysmallplasticSMDpackage.Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure. FEATURES •Excellentlinearity •Excellentmatchingto2DMA •Ver

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB149A

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp
BB151

Low-voltage variable capacitance diode

DESCRIPTION TheBB151isavariablecapacitancediode,fabricatedinplanartechnology,andencapsulatedintheSOD323verysmallplasticSMDpackage. FEATURES •Verylowcapacitancespread •Excellentlinearity •VerysmallplasticSMDpackage •C3:10.6pF;ratio:1.53 •Verylowseriesr

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB152

VHF variable capacitance diode

DESCRIPTION TheBB152isaplanartechnologyvariablecapacitancediode,inaSOD323(SC-76)package.Theexcellentmatchingperformanceisachievedbyglidingmatchingandadirectmatchingassemblyprocedure. FEATURES •Highlinearity •Excellentmatchingto2DMA •VerysmallplasticSMDp

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
BB152

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

BB1产品属性

  • 类型

    描述

  • 型号

    BB1

  • 制造商

    Carlo Gavazzi

BB1供应商更多...

更新时间：2024-5-29 14:40:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
BB173
NXP(恩智浦)
23+
标准封装
11233
全新原装正品/价格优惠/质量保障
询价
深圳市羿芯诚电子有限公司
BB11174
20+
TO-89
2860
原厂原装正品价格优惠公司现货欢迎查询
询价
深圳廊盛科技有限公司
BB101CAU
HITACHI/日立
2022
SOT343
80000
原装现货,OEM渠道,欢迎咨询
询价
深圳市莱克讯科技有限公司
BB101CAU
HITACHI
1922+
SOT343
90000
原装进口现货库存专业工厂研究所配单供货
询价
深圳市一线半导体有限公司
BB101C
renesas
2005
SOT-343
180000
询价
深圳市恒达亿科技有限公司
BB101C
RENESAS
23+
SOT343
3200
全新原装、诚信经营、公司现货销售
询价
深圳市航润创能电子集团有限公司
BB135,115
NXP/恩智浦
21+
NA
18000
只做原装,假一罚十
询价
深圳市航宇科工半导体有限公司
BB187
NXP/恩智浦
21+
SOD-523
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
询价
深圳市芯祺盛科技有限公司
BB1117A
TI/德州仪器
2138+
SOT-223
6900
询价
深圳市佳杰伟业科技有限公司
BB112
PHILIPS/飞利浦
2306+
TO-92
12651
优势代理渠道,原装现货,可全系列订货
询价

BB1芯片相关品牌

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  • GSI
  • MA-COM
  • MARL
  • MORNSUN
  • PAIRUI
  • PCA
  • PF
  • RENESAS
  • TTELEC
  • XFMRS

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BB1数据表相关新闻

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    BB535E7904HTSA1

    2023-11-13

  • BB172X

    BB172X

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  • BAV99W-7-F

    进口代理

    2022-12-26

  • BAV99LT1G

    属性参数值 商品目录开关二极管 反向恢复时间（trr）6ns 直流反向耐压（Vr）100V 平均整流电流（Io）215mA 正向压降（Vf）1.25V@150mA

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  • BAV99LT1G技术参数 BAV99LT1G品牌：ON 批号：1114+ 封装：SOT-23

    BAV99LT1G技术参数

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  • BC10-工业控制IC

    BC10和BC20无刷直流电动机控制器提供必要的功能来控制传统的3相无刷直流电动机开环或闭环系统。BC10能控制需要连续输入功率1千瓦的电动机;BC20是需要高达10千瓦，能够控制更大的马达连续输入功率。两个控制器驱动马达，产生PWM，解码减刑模式，多路电流检测，并提供误差放大。操作60°或120°减刑一个逻辑输入模式可以选择。电流检测的复用是用来做目前显示器总是积极电机线圈的电流成正比的输出。因此，可用于产生电流监视器输出跨导驱动器，便于伺服补偿。控制器可能产生的应用四象限PWM需要通过零速度，或2象限连续过渡电气安静单向应用操作的PWM。2象限模式的旋转方向可能逆转使用反向命令的输入。

    2012-12-4

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