低漏失型, 100V, 215mA, 开关二极管

BAV199FM是低IR的开关二极管。适合一般开关用途。 • High reliability\n• Small mold type\n• Low IR;

丝印代码：1D；Switching Diode (Low leakage)

文件：1.4717 Mbytes Page：8 Pages

低漏失型, 100V, 215mA, 车载用开关二极管

BAV199FMFH是低IR的开关二极管。适合一般开关用途。 • High reliability\n• Small mold type\n• Low IR;

丝印代码：1D；Switching Diode (Low leakage)

文件：1.47112 Mbytes Page：8 Pages

Low-leakage double diode

DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are connected in series. FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V •

Low-leakage double diode

DESCRIPTION Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package. The diodes are connected in series. FEATURES • Small plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8µs • Continuous reverse voltage: max. 75 V • Repeti

Silicon epitaxial planar type

Silicon epitaxial planar type For high voltage switching circuit ■ Features • High breakdown voltage: VR = 200 V • Short reverse recovery time trr • Small package, allowing automatic mounting

Silicon NPN Transistor Low Noise, High Gain Amplifier

Description: The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics.

Precision Reference

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