High-speed diode

DESCRIPTION The BAV105 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD80C SMD package. FEATURES • Small hermetically sealed glass SMD package • High switching speed: max. 6 ns • General application • C

HIGH SPEED SWITCHING DIODE

FEATURES : • High switching speed: max. 6 ns • General application • Continuous reverse voltage: max. 60 V • Repetitive peak reverse voltage: max. 60 V • Repetitive peak forward current: max. 600 mA. • Pb / RoHS Free

HIGH SPEED SWITCHING DIODE

FEATURES : • High switching speed: max. 6 ns • General application • Continuous reverse voltage: max. 60 V • Repetitive peak reverse voltage: max. 60 V • Repetitive peak forward current: max. 600 mA. • Pb / RoHS Free

Diodes Switching

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

Hybrid Power Module

The RF Line VHF Power Amplifier The MHW105 is designed specifically for portable radio applications. The MHW105 is capable of 5.0 watts power output, operates from a 7.5 volt supply and requires only 1.0 mW of RF input power. • Specified 7.5 Volt Characteristics: RF Input Power — 1.0 mW (0

SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

POWER TRANSISTORS(8A,60-100V,80W)

8 Ampere DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 80 WATTS TIP100,TIP101,TIP102 --> NPN TIP105,TIP106,TIP107 --> PNP