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BAV价格
参考价格:¥0.2037
型号:BAV100 品牌:Taiwan Semi 备注:这里有BAV多少钱,2024年最近7天走势,今日出价,今日竞价,BAV批发/采购报价,BAV行情走势销售排行榜,BAV报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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Small Signal Devices SWITCHINGDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Small Signal Devices SWITCHINGDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
Small Signal Devices SWITCHINGDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
High-speed diode DESCRIPTION TheBAV10isahigh-speedswitchingdiodefabricatedinplanartechnology,andencapsulatedinthehermeticallysealedleadedglassSOD27(DO-35)package. FEATURES •HermeticallysealedleadedglassSOD27(DO-35)package •Highswitchingspeed:max.6ns •Generalapplication •C | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
HIGH SPEED SWITCHING DIODE FEATURES: •Highswitchingspeed:max.6ns •Generalapplication •Continuousreversevoltage:max.60V •Repetitivepeakreversevoltage:max.60V •Repetitivepeakforwardcurrent:max.600mA *Pb/RoHSFree | SYNSEMI SynSemi,Inc. | |||
Small Signal Diodes Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 •SiliconEpitaxialPlanarDiodes •Thesediodesarealsoavailableinothercasestylesincluding:theDO-35case withthetypedesi | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
HIGH SPEED SILICON DIODES HermeticallySealed,GlassSiliconDiodes IntendedforSwitchingandGeneralPurposesinIndustrialEquipmente.g.Oscilloscopes,DigitalVoltmetersandVideoOutputStagesinColourTelevision | CDIL CDIL | |||
Silicon Epitaxial Planar Diodes Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Generalpurposes | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Small Signal Diodes FEATURES ♦SiliconEpitaxialPlanarDiodes ♦Forgeneralpurpose ♦Thesediodesarealsoavailableinother casestylesincluding:theDO-35casewith thetypedesignationsBAV19toBAV21,theSOD-123 casewiththetypedesignationsBAV19WtoBAV21W, andtheSOT-23casewiththe | GE GE Industrial Company | |||
Ultrafast Switching Surface Mount Si-Rectifiers SuperfastRecoverySMDRectifierDiodes Features PackagecompatibletoSOD-87 Highpowerdissipation ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Rectificationofhigherfrequencies, Highspeedswitching Commercialgrade1) MechanicalData1) | DiotecDIOTEC 德欧泰克 | |||
Ultrafast silicon rectifier diodes ForwardCurrent:0,2A ReverseVoltage:50to300V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0 ●Onegreenringdenotescathodeandultrafastswitchingdevice ●Thetypenumbersarenotedonlyonthelableonthereel | SemikronSemikron 赛米控 | |||
SMALL SIGNAL SWITCHING DIODE VOLTAGERANGE:50-200V CURRENT:250mA FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation MECHANICALDATA ◇Case:MINI-MELF,glasscase ◇Polarity:Colorbanddenotescathode ◇Weight:Approx0.031grams | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
500mW Hermetically Sealed Glass High Voltage Switching Diodes Features ●HighVoltageSwitchingDevice ●MiniMelfpackage ●Surfacedevicetypemounting ●Hermeticallysealedglass ●Compressionbondedconstruction ●Allexternalsurfacearecorrosionresistantandleadsarereadilysolderable ●RoHScompliant ●MatteTin(Sn | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
Small Signal Switching Diodes, High Voltage Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Generalpurposes | VishayVishay Siliconix 威世科技威世科技半导体 | |||
HIGH SPEED SWITCHING DIODES FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH | SYNSEMI SynSemi,Inc. | |||
General purpose diodes DESCRIPTION TheBAV100toBAV103areswitchingdiodesfabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSMDpackages. FEATURES •SmallhermeticallysealedglassSMDpackage •Switchingspeed:max.50ns •Generalapplication •Continuou | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
HIGH SPEED SWITCHING DIODES FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH | EIC EIC | |||
Small Signal Diodes Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 •SiliconEpitaxialPlanarDiodes •Thesediodesarealsoavailableinothercasestylesincluding:theDO-35case withthetypedesi | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
Small Signal Switching Diodes, High Voltage FEATURES •Siliconepitaxialplanardiode •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Generalpurposes | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Small Signal Switching Diodes, High Voltage FEATURES •Siliconepitaxialplanardiode •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Generalpurposes | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Small Signal Switching Diodes, High Voltage Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Generalpurposes | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Small Signal Switching Diodes, High Voltage Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Generalpurposes | VishayVishay Siliconix 威世科技威世科技半导体 | |||
General purpose diodes DESCRIPTION TheBAV100toBAV103areswitchingdiodesfabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSMDpackages. FEATURES •SmallhermeticallysealedglassSMDpackage •Switchingspeed:max.50ns •Generalapplication •Continuou | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
Silicon Epitaxial Planar Diodes Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Generalpurposes | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SURFACE MOUNT SWITCHING DIODE Features ●Case:MiniMELF,Glass ●Terminals:SolderableperMIL-STD-202,Method208 ●Polarity:CathodeBand ●Marking:CathodeBandOnly ●Weight:0.05grams(approx.) MechanicalData ●FastSwitchingSpeed ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion ●ForGeneralPur | DIODESDiodes Incorporated 达尔科技 | |||
Ultrafast Switching Surface Mount Si-Rectifiers SuperfastRecoverySMDRectifierDiodes Features PackagecompatibletoSOD-87 Highpowerdissipation ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Rectificationofhigherfrequencies, Highspeedswitching Commercialgrade1) MechanicalData1) | DiotecDIOTEC 德欧泰克 | |||
Ultrafast silicon rectifier diodes ForwardCurrent:0,2A ReverseVoltage:50to300V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0 ●Onegreenringdenotescathodeandultrafastswitchingdevice ●Thetypenumbersarenotedonlyonthelableonthereel | SemikronSemikron 赛米控 | |||
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES VOLTAGE120to250VoltsPOWER300mWatts FEATURES •FastswitchingSpeed. •SurfaceMountPackageIdeallySuitedForAutomaticInsertion. •SiliconEpitaxalPlanarConstruction. •IncompliancewithEURoHS2002/95/ECdirectives | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
500mW Hermetically Sealed Glass High Voltage Switching Diodes Features ●HighVoltageSwitchingDevice ●MiniMelfpackage ●Surfacedevicetypemounting ●Hermeticallysealedglass ●Compressionbondedconstruction ●Allexternalsurfacearecorrosionresistantandleadsarereadilysolderable ●RoHScompliant ●MatteTin(Sn | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
SMALL SIGNAL SWITCHING DIODE VOLTAGERANGE:50-200V CURRENT:250mA FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation MECHANICALDATA ◇Case:MINI-MELF,glasscase ◇Polarity:Colorbanddenotescathode ◇Weight:Approx0.031grams | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
Small Signal Switching Diodes, High Voltage Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Generalpurposes | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Small Signal Diodes Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 •SiliconEpitaxialPlanarDiodes •Thesediodesarealsoavailableinothercasestylesincluding:theDO-35case withthetypedesi | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SILICON EPITAXIAL PLANAR DIODES SILICONEPITAXIALPLANARDIODES HighVoltageGeneralPurposeDiodes | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
HIGH SPEED SWITCHING DIODES FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH | EIC EIC | |||
HIGH SPEED SILICON DIODES HermeticallySealed,GlassSiliconDiodes IntendedforSwitchingandGeneralPurposesinIndustrialEquipmente.g.Oscilloscopes,DigitalVoltmetersandVideoOutputStagesinColourTelevision | CDIL CDIL | |||
Small Signal Diodes FEATURES ♦SiliconEpitaxialPlanarDiodes ♦Forgeneralpurpose ♦Thesediodesarealsoavailableinother casestylesincluding:theDO-35casewith thetypedesignationsBAV19toBAV21,theSOD-123 casewiththetypedesignationsBAV19WtoBAV21W, andtheSOT-23casewiththe | GE GE Industrial Company | |||
HIGH SPEED SWITCHING DIODES FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH | SYNSEMI SynSemi,Inc. | |||
SWITCHING DIODE Features ·FastSwitchingSpeed ·SurfaceMountPackageIdeallySuitedfor AutomaticInsertion ·ForGeneralPurposeSwitchingApplications HighConductance | DAESAN Daesan Electronics Corp. | |||
Small Signal Switching Diodes, High Voltage Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Generalpurposes | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Small Signal Switching Diodes, High Voltage Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Generalpurposes | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Single general-purpose switching diodes Generaldescription Singlegeneral-purposeswitchingdiodes,fabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSurface-MountedDevice(SMD)packages. Features ●Highswitchingspeed:trr≤50ns ●Lowleakagecurrent ●Lowcapacitance:Cd | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | |||
SMALL SIGNAL SWITCHING DIODE VOLTAGERANGE:50-200V CURRENT:250mA FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation MECHANICALDATA ◇Case:MINI-MELF,glasscase ◇Polarity:Colorbanddenotescathode ◇Weight:Approx0.031grams | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
500mW Hermetically Sealed Glass High Voltage Switching Diodes Features ●HighVoltageSwitchingDevice ●MiniMelfpackage ●Surfacedevicetypemounting ●Hermeticallysealedglass ●Compressionbondedconstruction ●Allexternalsurfacearecorrosionresistantandleadsarereadilysolderable ●RoHScompliant ●MatteTin(Sn | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | |||
SILICON EPITAXIAL PLANAR DIODES SILICONEPITAXIALPLANARDIODES HighVoltageGeneralPurposeDiodes | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | |||
HIGH SPEED SWITCHING DIODES FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH | SYNSEMI SynSemi,Inc. | |||
General purpose diodes DESCRIPTION TheBAV100toBAV103areswitchingdiodesfabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSMDpackages. FEATURES •SmallhermeticallysealedglassSMDpackage •Switchingspeed:max.50ns •Generalapplication •Continuou | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | |||
Silicon Epitaxial Planar Diodes Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Generalpurposes | VishayVishay Siliconix 威世科技威世科技半导体 | |||
High Voltage, General Purpose Diode GeneralDescription: AGeneralPurposediodethatcoupleshighforwardconductancefastswitchingspeedandhighblockingvoltagesinaglassleadlessLL-34SurfaceMountpackage. PlacementoftheExpansionGaphasnorelationshiptothelocationoftheCathodeTerminalwhichisindicatedby | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Small Signal Diodes FEATURES ♦SiliconEpitaxialPlanarDiodes ♦Forgeneralpurpose ♦Thesediodesarealsoavailableinother casestylesincluding:theDO-35casewith thetypedesignationsBAV19toBAV21,theSOD-123 casewiththetypedesignationsBAV19WtoBAV21W, andtheSOT-23casewiththe | GE GE Industrial Company | |||
Ultrafast Switching Surface Mount Si-Rectifiers SuperfastRecoverySMDRectifierDiodes Features PackagecompatibletoSOD-87 Highpowerdissipation ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Rectificationofhigherfrequencies, Highspeedswitching Commercialgrade1) MechanicalData1) | DiotecDIOTEC 德欧泰克 | |||
Ultrafast silicon rectifier diodes ForwardCurrent:0,2A ReverseVoltage:50to300V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0 ●Onegreenringdenotescathodeandultrafastswitchingdevice ●Thetypenumbersarenotedonlyonthelableonthereel | SemikronSemikron 赛米控 | |||
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODES VOLTAGE120to250VoltsPOWER300mWatts FEATURES •FastswitchingSpeed. •SurfaceMountPackageIdeallySuitedForAutomaticInsertion. •SiliconEpitaxalPlanarConstruction. •IncompliancewithEURoHS2002/95/ECdirectives | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | |||
HIGH SPEED SWITCHING DIODES FEATURES: •Switchingspeed:max.50ns •Generalapplication •Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively •Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively •Repetitivepeakforwardcurrent:max.625mA. •Pb/RoH | EIC EIC | |||
Small Signal Diodes Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •MoistureSensitivityLevel1 •SiliconEpitaxialPlanarDiodes •Thesediodesarealsoavailableinothercasestylesincluding:theDO-35case withthetypedesi | MCCMicro Commercial Components 美微科美微科半导体公司 | |||
SURFACE MOUNT SWITCHING DIODE Features ●Case:MiniMELF,Glass ●Terminals:SolderableperMIL-STD-202,Method208 ●Polarity:CathodeBand ●Marking:CathodeBandOnly ●Weight:0.05grams(approx.) MechanicalData ●FastSwitchingSpeed ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion ●ForGeneralPur | DIODESDiodes Incorporated 达尔科技 | |||
Small Signal Switching Diodes, High Voltage Features •SiliconEpitaxialPlanarDiodes •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications •Generalpurposes | VishayVishay Siliconix 威世科技威世科技半导体 | |||
HIGH SPEED SILICON DIODES HermeticallySealed,GlassSiliconDiodes IntendedforSwitchingandGeneralPurposesinIndustrialEquipmente.g.Oscilloscopes,DigitalVoltmetersandVideoOutputStagesinColourTelevision | CDIL CDIL | |||
Small Signal Switching Diodes, High Voltage FEATURES •Siliconepitaxialplanardiode •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 APPLICATIONS •Generalpurposes | VishayVishay Siliconix 威世科技威世科技半导体 | |||
SWITCHING DIODE Features ·FastSwitchingSpeed ·SurfaceMountPackageIdeallySuitedfor AutomaticInsertion ·ForGeneralPurposeSwitchingApplications HighConductance | DAESAN Daesan Electronics Corp. | |||
Single general-purpose switching diodes Featuresandbenefits *Highswitchingspeed:trr≤50ns *Lowcapacitance:Cd≤5pF *Lowleakagecurrent *Smallhermeticallysealedglass SMDpackage | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |
BAV产品属性
- 类型
描述
- 型号
BAV
- 制造商
SYNSEMI
- 制造商全称
SYNSEMI
- 功能描述
HIGH SPEED SWITCHING DIODE
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NXP(恩智浦) |
23+ |
标准封装 |
17468 |
全新原装正品/价格优惠/质量保障 |
|||
Vishay(威世) |
23+ |
标准封装 |
16048 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
|||
VISHAY |
2020+ |
LL34 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NEXPERIA B.V. |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
22+ |
LL34 |
9850 |
只做原装正品假一赔十!正规渠道订货! |
|||
VISHAY/威世 |
21+ |
NA |
152500 |
只做原装,假一罚十 |
|||
VISHAY/威世 |
08+ |
LL34 |
37500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
2022 |
LL34 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
TEL |
22+ |
LL34 |
8000 |
原装正品支持实单 |
BAV规格书下载地址
BAV参数引脚图相关
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- bcm2727
- bcm
- bc01
- BAV18
- BAV170W
- BAV170T
- BAV170M
- BAV170
- BAV17
- BAV16WS
- BAV16W
- BAV16P
- BAV16L
- BAV16
- BAV116W
- BAV116T
- BAV105
- BAV104
- BAV103-TP
- BAV103-GS18
- BAV103-GS08
- BAV103.115
- BAV103,135
- BAV103,115
- BAV103
- BAV102-TP
- BAV102-GS08
- BAV102_R1_10001
- BAV102,135
- BAV102,115
- BAV102
- BAV101-GS18
- BAV101-GS08
- BAV101_R1_10001
- BAV101
- BAV100-GS18
- BAV100-GS08
- BAV100
- BAV10
- BATT-T40
- BATTEST
- BATTCLIPINSULATINGCOVER,RED
- BATTCLIPINSULATINGCOVER,BLACK
- BATT-9500
- BATT-910
- BATT-9000
- BATT-3000
- BATT-100
- BATT-098
- BATSW
- BATR-753S
- BATMOD
- BAT-HLD-012-THM
- BAT-HLD-012-SMT-TR
- BAT-HLD-012-SMT
- BAT-HLD-002-THM
- BAT-HLD-002-SMT
- BAT-HLD-001-THM
- BAT-HLD-001
- BATCW
- BAT-C2
- BATAW
- BAT960,115
- BAT960
- BAT93
- BAT86S
- BAT86,133
- BAT86
- BAT85S
- BAT854W
- BAT85
- BAT83S
- BAT83
- BAT82S
- BAT82
- BAT81S
- BAT81
- BAT760Q
- BAT760
BAV数据表相关新闻
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2023-3-17BAT54WSG-SOD323R-TG
BAT54WSG-SOD323R-TG
2023-1-31BAT54XV2T5G 全新原装正品 现货
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2022-8-8BAV19WS
品牌CJ型号BAV19WS批次20+封装SOD-323
2021-7-2BAV21W
BAV21W,全新原装当天发货或门市自取0755-82732291.
2020-3-10BAT60JFILM
深圳科雨电子有限公司,联系人:卢小姐手机:18975515225 原装正品大量现货,有需要的可以联系我QQ:97877805微信:wei555222777
2019-8-27
DdatasheetPDF页码索引
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