SCHOTTKY BARRIER DIODES

DESCRIPTION The UTC BAT721X are schottky barrier diodes, it uses UTC’s advanced technology to provide customers with low forward voltage drop and ultra high switching speed, etc. The UTC BAT721X is suitable for applications such as ultra high-speed switching, protection circuits and voltage clam

SCHOTTKY BARRIER DIODES

The UTC BAT721X are schottky barrier diodes, it uses UTC’sadvanced technology to provide customers with low forwardvoltage drop and ultra high switching speed, etc.The UTC BAT721X is suitable for applications such as ultrahigh-speed switching, protection circuits and voltage clamping. • Low forward voltage drop\n• Ultra high switching speed;

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

Schottky barrier double diodes

DESCRIPTION Planar Schottky barrier diodes encapsulated in a SOT23 small plastic SMD package. Single diodes and double diodes with different pinning are available. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS •

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier

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